2N3637UB JFET-Transistor von ON Semiconductor | Rauscharmer Verstärker | TO-92 Gehäuse

2N3637UB Overview

The 2N3637UB is a high-performance NPN bipolar junction transistor designed for low-noise amplification and switching applications. It features a medium power rating and a robust construction that ensures reliable operation under various electrical conditions. With its optimized gain characteristics and stable frequency response, this transistor is ideal for signal amplification in industrial and communication circuits. Sourcing this device from a trusted IC-Hersteller guarantees consistent quality and adherence to stringent semiconductor standards.

2N3637UB Key Features

• Niedrige Rauschzahl: Enables high-fidelity signal amplification, critical for sensitive analog circuits.
• Medium Power Handling: Supports efficient switching and amplification without excessive heat generation.
• High Current Gain (hFE): Provides improved amplification efficiency, reducing the need for additional gain stages.
• Thermische Stabilität: Designed to maintain consistent performance over wide temperature ranges, enhancing reliability.

2N3637UB Technical Specifications

Parameter	Wert
Transistor Typ	NPN Bipolar Junction
Kollektor-Emitter-Spannung (Vceo)	30 V
Kollektorstrom (Ic)	0.8 A
Power Dissipation (Ptot)	0.5 W
DC-Stromverstärkung (hFE)	70 to 300
Übergangsfrequenz (fT)	100 MHz
Rauschzahl	Low (specific value per datasheet)
Betriebstemperaturbereich	-65??C to +200??C
Paket Typ	TO-18 Metalldose

2N3637UB Advantages vs Typical Alternatives

This transistor offers superior low-noise amplification and a high current gain compared to typical alternatives in the same class. Its medium power handling combined with excellent thermal stability makes it a reliable choice for industrial electronics where consistent performance and durability are essential. The metal can package also provides better heat dissipation and mechanical robustness than plastic-encapsulated devices.

Typische Anwendungen

• Low-noise preamplifiers in radio frequency (RF) and audio circuits, where signal integrity must be preserved during amplification.
• Switching circuits requiring moderate power handling and fast response times.
• Industrial control systems that benefit from reliable transistor performance over wide temperature ranges.
• General-purpose amplification tasks in communication and instrumentation equipment.

2N3637UB Brand Info

The 2N3637UB is a well-established transistor model offered by leading semiconductor manufacturers known for stringent quality control and consistent electrical characteristics. Its reputation in the electronics industry stems from its robust design and reliable performance, making it a preferred choice for engineers and sourcing specialists requiring dependable medium-power transistors in metal can packaging.

FAQ

What type of transistor is the 2N3637UB?

The device is an NPN bipolar junction transistor (BJT), commonly used for amplification and switching in electronic circuits. Its bipolar design allows for high current gain and efficient signal handling.

What is the maximum collector current the transistor can handle?

The maximum collector current rating is 0.8 amps, which supports moderate power applications without risking damage or performance degradation.

How does the 2N3637UB perform in terms of noise?

This transistor is designed with a low noise figure, making it suitable for applications that require high signal-to-noise ratios, such as audio preamplifiers and RF front-end stages.

What packaging does this transistor use, and why is it important?

The 2N3637UB comes in a TO-18 metal can package, which provides excellent thermal conductivity and mechanical durability, enhancing reliability in harsh operating environments.

Can this transistor operate under extreme temperature conditions?

Yes, it supports an operating temperature range from -65??C to +200??C, making it suitable for industrial and aerospace applications where temperature extremes are common.