2N3421S-Transistor Overview
The 2N3421S-Transistor is a robust NPN silicon transistor designed for medium-power amplification and switching applications. Offering reliable electrical characteristics with a collector-emitter voltage rating suitable for diverse industrial environments, this transistor excels in power handling and frequency response. Its sturdy package ensures durability under thermal stress, making it a preferred choice for engineers requiring consistent performance in control circuits, amplifiers, and power regulation modules. Sourced from trusted manufacturing processes, the 2N3421S provides dependable gain and saturation characteristics essential for precision electronic design. For more detailed information and procurement, visit the IC-Hersteller Website.
2N3421S-Transistor Technical Specifications
Parameter | Spezifikation |
---|---|
Transistor Typ | NPN Silicon |
Kollektor-Emitter-Spannung (VCEO) | 60 V |
Kollektor-Basis-Spannung (VCBO) | 75 V |
Emitter-Basis-Spannung (VEBO) | 5 V |
Kollektorstrom (IC) | 800 mA |
Verlustleistung (Ptot) | 30 W |
DC-Stromverstärkung (hFE) | 40 to 160 (at IC=150 mA) |
Übergangsfrequenz (fT) | 3 MHz (typical) |
Paket Typ | TO-18 Metalldose |
2N3421S-Transistor Key Features
- Medium-power capability: Supports collector currents up to 800 mA, enabling effective power amplification and switching in industrial circuits.
- Hohe Spannungstoleranz: Collector-emitter voltage rating of 60 V ensures operation in moderately high voltage environments, enhancing design flexibility.
- Wide current gain range: DC current gain from 40 to 160 allows for adaptable amplification levels suitable for various signal processing needs.
- Reliable thermal stability: Metal TO-18 package provides excellent heat dissipation, ensuring durability and consistent performance under thermal stress.
Typische Anwendungen
- Power amplification stages in audio and signal processing circuits, where medium power handling and gain linearity are critical for sound fidelity and signal integrity.
- Switching devices in control systems, allowing efficient on/off control of loads within industrial automation equipment.
- Driver circuits for relays and solenoids, leveraging the transistor??s current capacity to energize electromagnetic components reliably.
- General purpose amplification in analog circuits, suitable for interfacing sensor outputs or signal conditioning in instrumentation.
2N3421S-Transistor Advantages vs Typical Alternatives
This transistor offers a balanced combination of voltage rating, current capacity, and gain performance compared to typical alternatives. Its robust metal package enhances thermal management and device longevity, while the broad current gain range provides design flexibility. These factors contribute to higher reliability and efficiency in medium-power industrial applications, making it a superior choice for engineers seeking dependable switching and amplification solutions in harsh operational environments.
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2N3421S-Transistor Brand Info
The 2N3421S is a well-established transistor model commonly manufactured by recognized semiconductor producers specializing in discrete components. Its production adheres to stringent quality standards to ensure performance consistency. This transistor is widely available through authorized distributors and supports legacy as well as modern industrial designs. It is particularly favored for its ruggedness and proven track record in power amplification and switching tasks within industrial electronics.
FAQ
What type of transistor is the 2N3421S and what are its main electrical characteristics?
The 2N3421S is an NPN silicon transistor designed for medium power applications. It features a collector-emitter voltage rating of 60 V, collector current up to 800 mA, and a DC current gain ranging from 40 to 160
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