2N2222AE3-Transistor-RoHS Overview
The 2N2222AE3 is a RoHS-compliant NPN bipolar junction transistor designed for general-purpose switching and amplification applications. Its robust electrical characteristics make it suitable for use in low to medium power circuits, offering reliable performance across various industrial environments. The device supports a collector current up to 800mA with a collector-emitter voltage of 40V, making it a versatile choice for signal processing and switching tasks. This transistor is widely adopted in design scenarios requiring efficient current handling and fast switching speeds. Available through IC-Hersteller, it meets stringent environmental and quality standards essential for modern electronic systems.
2N2222AE3-Transistor-RoHS Technical Specifications
Parameter | Wert | Einheit |
---|---|---|
Kollektor-Emitter-Spannung (VCEO) | 40 | V |
Kollektor-Basis-Spannung (VCBO) | 75 | V |
Emitter-Basis-Spannung (VEBO) | 6 | V |
Kollektorstrom (IC) | 800 | mA |
Verlustleistung (Ptot) | 625 | mW |
Übergangsfrequenz (fT) | 250 | MHz |
DC-Stromverstärkung (hFE) | 100?C300 | ?C |
Betriebstemperaturbereich | -55 bis +150 | ??C |
2N2222AE3-Transistor-RoHS Key Features
- High Collector Current Capacity: Supports up to 800mA, enabling reliable switching in power-demanding circuits.
- Schnelle Umschaltgeschwindigkeit: Transition frequency of 250MHz ensures quick response times, critical for high-frequency applications.
- Breiter Betriebstemperaturbereich: Robust performance from -55??C to +150??C ensures stability in varied industrial environments.
- RoHS Compliance: Environmentally friendly manufacturing meets global standards, supporting sustainable product designs.
Typische Anwendungen
- Switching circuits in industrial control systems, where dependable transistor switching ensures precise operation of relays and actuators.
- Signal amplification in audio and low-power RF circuits, providing clean gain with minimal distortion.
- General-purpose amplification in instrumentation and sensor interface modules requiring stable and consistent transistor characteristics.
- Pulse generation and timing circuits needing fast switching capabilities for accurate timing control.
2N2222AE3-Transistor-RoHS Advantages vs Typical Alternatives
This transistor offers a balanced combination of moderate voltage and high current handling with fast switching speeds, outperforming many generic NPN transistors in similar classes. Its extended temperature range and RoHS compliance enhance reliability and environmental sustainability, making it an efficient and responsible choice for engineers seeking durable and regulatory-compliant components in switching and amplification roles.
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2N2222AE3-Transistor-RoHS Brand Info
The 2N2222AE3 is a standardized transistor widely manufactured by multiple semiconductor suppliers, including leading brands specializing in discrete components. The “AE3” suffix typically denotes a specific binning or packaging variant optimized for consistent electrical performance and traceability. This device??s broad availability from reputable brands ensures compatibility with established design standards and reliable sourcing for industrial production.
FAQ
What is the maximum collector current rating for this transistor?
The transistor supports a maximum collector current of 800mA, allowing it to handle moderate power loads effectively in switching and amplification circuits.
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Is the device suitable for high-frequency applications?
Yes, with a transition frequency (fT) of 250MHz, it is well-suited for applications