2N2219AP-Transistor-PIND NPN Amplifier Transistor – 2N2219AP Package by [Brand]

2N2219AP-Transistor-PIND Overview

The 2N2219AP-Transistor-PIND is a reliable NPN bipolar junction transistor designed for medium power amplification and switching applications. It offers robust current handling and voltage capabilities, making it suitable for a wide range of industrial and consumer electronics. This transistor features a PIND (Plastic Inductive) package which provides enhanced mechanical protection and thermal dissipation. With its versatility and dependable electrical performance, it is widely used in signal amplification, driver stages, and general-purpose switching circuits. For detailed sourcing and technical support, visit IC-Hersteller.

2N2219AP-Transistor-PIND Key Features

• Hohe Stromverstärkung: Ensures efficient amplification with minimal distortion, improving signal integrity in your circuit designs.
• Medium power handling capability: Supports collector currents up to 800mA, enabling control of moderately high loads without compromising reliability.
• Robust voltage rating: Withstands collector-emitter voltages up to 40V, offering flexibility in diverse operating environments.
• Durable PIND packaging: Provides enhanced mechanical strength and thermal management to improve device longevity in industrial applications.

2N2219AP-Transistor-PIND Technical Specifications

Parameter	Spezifikation
Transistor Typ	NPN Bipolar Junction
Kollektor-Emitter-Spannung (VCEO)	40 V
Kollektorstrom (IC)	800 mA
Verlustleistung (Ptot)	0.8 W
Verstärkung Bandbreitenprodukt (fT)	250 MHz
DC-Stromverstärkung (hFE)	40 to 300 (depending on operating point)
Paket Typ	PIND (Plastic Inductive)
Betriebstemperaturbereich	-55° C bis +150° C

2N2219AP-Transistor-PIND Advantages vs Typical Alternatives

This transistor offers a balanced combination of high current capacity and voltage tolerance compared to typical low-power transistors. Its PIND packaging enhances thermal management and mechanical robustness, increasing reliability under harsh industrial conditions. The device??s high gain bandwidth product supports faster switching and amplification, making it a preferred choice over standard general-purpose transistors when stability and performance are critical.

Typische Anwendungen

• Signal amplification stages in audio and instrumentation circuits, where low distortion and stable gain are required for precise signal processing.
• Switching applications controlling moderate loads such as relays, motors, or lamps in industrial control systems.
• Driver circuits for higher power transistors or MOSFETs, enabling efficient stage interfacing and power management.
• General-purpose amplification and switching in consumer electronics, including communication devices and power regulators.

2N2219AP-Transistor-PIND Brand Info

The 2N2219AP-Transistor-PIND is offered by reputable semiconductor manufacturers specializing in high-quality bipolar transistors for industrial and commercial electronics. Known for their stringent quality control and adherence to industry standards, these manufacturers ensure the transistor delivers consistent electrical parameters and mechanical robustness. The PIND packaging reflects a design focus on durability and ease of integration in automated assembly lines, supporting long-term reliability in demanding environments.

FAQ

What is the maximum collector current for the 2N2219AP transistor?

The maximum continuous collector current rating is 800 mA. This allows the device to handle moderate power loads safely when used within specified operating conditions, making it suitable for driver and switching applications.

Can this transistor be used in high-frequency circuits?

Yes, the transistor??s gain bandwidth product of approximately 250 MHz supports applications requiring moderate high-frequency operation, such as RF amplification and fast switching circuits.

What package type does the 2N2219AP transistor use, and why is it important?

This device uses a PIND (Plastic Inductive) package, which provides enhanced mechanical strength and improved thermal dissipation compared to standard plastic packages. This is critical for maintaining performance and reliability in industrial environments.

What temperature range is suitable for the 2N2219AP transistor?

The operating temperature range spans from -55??C to +150??C, enabling use in a broad range of environmental conditions from cold storage to elevated temperature industrial settings without performance degradation.

How does the 2N2219AP compare to similar general-purpose transistors?

Compared to typical general-purpose transistors, this device offers higher current capacity and voltage tolerance, along with a robust package design. This combination provides better performance, reliability, and suitability for demanding industrial applications.