2C4150 Overview
The 2C4150 is a high-performance semiconductor device designed for industrial and electronic applications requiring reliable switching and amplification. This component features robust electrical characteristics suitable for analog and digital circuits, offering consistent performance under varying operating conditions. Its design supports efficient integration into complex systems, ensuring enhanced durability and operational stability. Engineers and sourcing specialists will find the 2C4150 valuable for applications demanding precision and dependable electrical parameters. For detailed product sourcing and support, visit IC-Hersteller.
2C4150 Key Features
- Hohe Strombelastbarkeit: Supports up to 3A continuous collector current, enabling effective control of medium power loads.
- Breiter Spannungsbereich: Collector-emitter voltage rating of 60V allows operation in diverse voltage environments without compromise.
- Enhanced Switching Speed: Low saturation voltage ensures rapid switching, which reduces power dissipation and improves efficiency.
- Thermische Stabilität: Capable of operating at junction temperatures up to 150??C, ensuring reliability in high-temperature industrial settings.
2C4150 Technical Specifications
Parameter | Wert | Einheit |
---|---|---|
Kollektor-Emitter-Spannung (VCEO) | 60 | V |
Kollektor-Basis-Spannung (VCBO) | 80 | V |
Emitter-Basis-Spannung (VEBO) | 5 | V |
Collector Current Continuous (IC) | 3 | A |
Verlustleistung (Ptot) | 30 | W |
DC-Stromverstärkung (hFE) | 100?C320 | ?C |
Übergangsfrequenz (fT) | 100 | MHz |
Betriebssperrschichttemperatur (TJ) | -65 to 150 | ??C |
2C4150 Advantages vs Typical Alternatives
This device offers superior current capacity and voltage tolerance compared to similar transistors, providing engineers with greater design flexibility. Its low saturation voltage enhances efficiency by minimizing power loss during switching, while its wide operating temperature range ensures stable performance in harsh environments. These advantages make it a reliable choice for industrial circuits requiring robust, high-speed switching and amplification.
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Typische Anwendungen
- Power amplification in industrial control systems, ensuring efficient signal amplification and reliable operation under demanding electrical loads.
- Switching elements in motor drives and relay controls, facilitating rapid and precise switching performance.
- Signal processing circuits in communication equipment, benefiting from high frequency response and gain stability.
- General-purpose switching in electronic devices requiring sturdy and consistent transistor behavior across temperature variations.
2C4150 Brand Info
The 2C4150 is offered by a leading semiconductor manufacturer renowned for delivering high-quality discrete components for industrial and electronic applications. This transistor is part of a product line designed to meet stringent performance requirements, combining durability with efficient electrical characteristics. The brand emphasizes reliability and industry-standard compliance, ensuring that the 2C4150 supports demanding design and sourcing needs.
FAQ
What is the maximum collector current rating for this transistor?
The device supports a continuous collector current of up to 3 Amperes, making it suitable for medium power applications where current handling is critical.
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What voltage levels can the transistor safely operate at?
It features a collector-emitter voltage rating of 60 volts and a collector-base voltage rating of 80 volts, allowing operation in circuits with moderate voltage requirements.
How does the 2C4150 perform at elevated temperatures?
The transistor can reliably operate up to a junction temperature of 150??C, providing thermal stability for industrial environments subject to temperature fluctuations.
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What is the typical gain range for this transistor?
The DC current gain (hFE) ranges between 100 and 320, enabling effective amplification with consistent performance across its operating range.
Ist dieser Transistor für Hochfrequenzanwendungen geeignet?
Yes, with a transition frequency of approximately 100 MHz, the device is compatible with moderate to high-frequency switching and amplification tasks in communication and signal processing circuits.