1N5818 Schottky-Diode 1A 40V - DO-41 Glaspassivierter Gleichrichter | Vishay

  • Acts as a Schottky diode to provide fast switching and low forward voltage drop, improving efficiency in circuits.
  • Features a maximum repetitive peak reverse voltage that ensures safe operation under high-voltage conditions.
  • Its compact package design allows for efficient use of board space in densely populated electronic assemblies.
  • Commonly used in power supply rectification, it helps reduce power loss and heat generation for better performance.
  • Constructed to deliver consistent operation and withstand typical electrical stresses encountered in standard applications.
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1N5818 Overview

The 1N5818 is a widely used Schottky barrier rectifier diode designed for high efficiency and fast switching in power supply circuits. With a maximum repetitive peak reverse voltage of 30V and a forward current rating of 1A, this device excels in applications requiring low forward voltage drop and minimal power loss. Its robust construction ensures reliable operation in environments with temperatures up to 125??C. The 1N5818 is favored for its low forward voltage and rapid recovery time, making it ideal for power rectification, voltage clamping, and freewheeling diode roles. Available through IC-Hersteller, it suits a broad range of industrial and consumer electronics applications.

1N5818 Technical Specifications

Parameter Wert Einheit
Maximale wiederkehrende Spitzensperrspannung (VRRM) 30 V
Durchschnittlicher Vorwärtsstrom (IF(AV)) 1 A
Non-Repetitive Peak Surge Current (IFSM) 25 A
Forward Voltage Drop (VF) at IF = 1A 0.45 V (typical)
Reverse Current (IR) at VR = 25V 0.5 mA (max)
Sperrschichttemperaturbereich (TJ) -65 bis +125 ??C
Lagertemperaturbereich (TSTG) -65 bis +150 ??C
Diode Type Schottky Barrier

1N5818 Key Features

  • Niedriger Durchlassspannungsabfall: Minimizes conduction losses, enhancing power efficiency in rectification applications.
  • Schnelle Schaltgeschwindigkeit: Reduces switching losses and electromagnetic interference, beneficial in high-frequency circuits.
  • Hohe Stoßstromfähigkeit: Supports transient current spikes up to 25A, ensuring durability under load variations.
  • Breiter Betriebstemperaturbereich: Reliable performance from -65??C to 125??C enables use in harsh industrial environments.

Typische Anwendungen

  • Power supply rectification in DC-DC converters and low voltage power supplies, where efficiency and fast recovery are critical to overall system performance.
  • Freewheeling diode in inductive load circuits to prevent voltage spikes that could damage switching components.
  • Voltage clamping and protection circuits to guard sensitive electronics from transient voltage conditions.
  • Battery charging circuits requiring low forward voltage drop to reduce power loss and improve charging efficiency.

1N5818 Advantages vs Typical Alternatives

Compared to standard silicon diodes, this Schottky rectifier offers a significantly lower forward voltage drop, resulting in improved energy efficiency and reduced heat generation. Its fast switching characteristics enable higher frequency operation with minimal switching losses. The device??s surge current handling and broad temperature tolerance provide enhanced reliability in demanding industrial and consumer electronics environments.

1N5818 Brand Info

The 1N5818 Schottky diode is a popular component manufactured by several reputable semiconductor suppliers, including Vishay, ON Semiconductor, and Diodes Incorporated. These manufacturers provide devices compliant with industry standards, ensuring high quality and consistency. The diode is typically available in a DO-41 axial package, suitable for through-hole mounting and automated assembly processes. Users can expect robust performance supported by extensive datasheets and technical support from these established brands.

FAQ

What is the maximum current the 1N5818 can handle continuously?

The maximum average forward current rating for this diode is 1 ampere, meaning it can continuously conduct up to this level under specified thermal conditions without degradation.

What type of diode is the 1N5818?

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