1N5288UR-1/TR High Voltage Diode, Fast Recovery, DO-41 Package

1N5288UR-1/TR Overview

The 1N5288UR-1/TR is a high-performance silicon diode designed for precision voltage regulation and switching applications. Offering reliable operation with a maximum repetitive reverse voltage of 25V and a forward current rating of 1A, this device ensures stable performance in demanding electronic circuits. Its glass-passivated junction and hermetic glass package provide enhanced durability and consistent electrical characteristics over time. Ideal for industrial and consumer electronics, the diode supports efficient circuit design with low forward voltage drop and fast recovery times. Sourced from a trusted manufacturer, the device guarantees quality and reliability for engineers and sourcing specialists seeking robust semiconductor components. For more details, visit IC-Hersteller.

1N5288UR-1/TR Technical Specifications

Parameter	Wert	Einheit
Maximum Repetitive Reverse Voltage (VRRM)	25	V
Durchschnittlicher Vorwärtsstrom (IF(AV))	1	A
Maximum Forward Voltage (VF) at 1A	1.3	V
Peak Forward Surge Current (IFSM)	30	A
Erholungszeit rückwärts (trr)	75	ns
Übergangskapazität (CJ)	15	pF
Betriebstemperaturbereich (TJ)	-65 bis +150	??C
Lagertemperaturbereich (TSTG)	-65 to +175	??C

1N5288UR-1/TR Key Features

• High Voltage Tolerance: Supports repetitive reverse voltages up to 25V, enabling use in moderately high-voltage circuit environments.
• Robust Forward Current Rating: Handles continuous forward current of 1A, suitable for various power regulation and switching applications.
• Niedriger Vorwärtsspannungsabfall: Ensures efficient power usage and minimized heat dissipation, critical for energy-sensitive designs.
• Fast Reverse Recovery Time: With a recovery time of 75 nanoseconds, it reduces switching losses in high-speed circuits.
• Hermetic Glass Passivation: Provides enhanced long-term reliability and protection against environmental stresses.
• Compact DO-41 Package: Facilitates easy PCB integration while maintaining excellent thermal performance.

1N5288UR-1/TR Advantages vs Typical Alternatives

This device offers superior reliability and performance compared to many standard silicon diodes in similar voltage and current classes. Its low forward voltage drop and fast recovery time enhance energy efficiency and reduce switching losses, making it well-suited for high-speed applications. The hermetic glass packaging improves durability, providing longer operational life under harsh industrial conditions. These factors contribute to better overall system stability and reduced maintenance costs.

Typische Anwendungen

• Voltage regulation and reference circuits, where stable diode characteristics ensure precise voltage control and improved circuit reliability.
• Switching power supplies, leveraging fast recovery time for efficient power conversion and minimal electromagnetic interference.
• Protection circuits, guarding sensitive components from voltage spikes and transient surges in industrial and consumer electronics.
• Signal demodulation and rectification tasks in communication and control systems requiring consistent diode performance.

1N5288UR-1/TR Brand Info

Manufactured by a leading semiconductor supplier, this diode series is known for its quality and consistency. The 1N5288UR-1/TR represents a carefully engineered solution optimized for voltage regulation and switching applications. Combining proven manufacturing techniques with precise quality control, the product meets stringent industrial standards. Its availability in bulk and tape-and-reel packaging supports efficient assembly processes, catering to the needs of both engineers and sourcing specialists.

FAQ

What is the maximum operating temperature for this diode?

The diode can reliably operate within a junction temperature range from -65??C to +150??C, making it suitable for a wide variety of industrial environments and thermal conditions.

How does the forward voltage drop affect circuit efficiency?

A lower forward voltage drop reduces power loss during conduction, which improves overall circuit efficiency and minimizes heat generation, critical for power-sensitive and compact designs.

What packaging type does this diode come in?

This component is supplied in a DO-41 axial-lead hermetic glass package, offering robust environmental protection and ease of mounting on printed circuit boards.

Can this diode handle surge currents?

Yes, it supports peak forward surge currents of up to 30A, allowing it to withstand transient high-current events without damage, enhancing circuit protection.

Is this diode suitable for fast switching applications?

Its reverse recovery time of 75 nanoseconds makes it effective in fast switching circuits, reducing switching losses and improving overall system performance.