SMJ68CE16S-35JDM Legacy Hermetic 128K×8 CMOS Static RAM (SRAM) Overview
The SMJ68CE16S-35JDM from Texas Instruments is a high-reliability 128K×8 static random-access memory (SRAM) engineered for legacy industrial, aerospace, and defense systems. Part of TI’s iconic CMOS SRAM portfolio—trusted for decades in mission-critical applications—it provides fast, temporary data storage with no need for power refresh. Its combination of 35ns access time, hermetic J-lead DIP (JDM-32) package, and wide temperature range makes it indispensable for maintaining or upgrading older electronics that demand consistent performance in harsh conditions. الشركة المصنعة للدوائر المتكاملة تقدم هذه الذاكرة الصناعية كجزء من محفظتها من أشباه الموصلات الموثوق بها من تكساس إنسترومنتس.
Technical Parameters for SMJ68CE16S-35JDM Industrial SRAM
| المعلمة | القيمة | الوحدة |
|---|---|---|
| الوظيفة | ذاكرة وصول عشوائي ثابتة (SRAM) سعة 128K × 8 | |
| تكوين الذاكرة | 131,072 × 8 | Bits (1024 Kbits total) |
| وقت الوصول (الحد الأقصى) | 35 | نانو ثانية (عند 5 فولت، 25 درجة مئوية) |
| نطاق جهد الإمداد | 4.5 إلى 5.5 | فولت (إمداد واحد، متوافق مع CMOS) |
| تبديد طاقة التهدئة (نموذجي) | 90 | ميجاوات (عند 5 فولت، بدون حمل) |
| نوع الحزمة | JDM-32 (حزمة J-DM-32 (حزمة J-Lead ثنائية الخط، 32 سنًا، سيراميك محكم الإغلاق) | |
| نطاق درجة حرارة التشغيل | -55 إلى +125 | درجة مئوية (درجة صناعية/عسكرية) |
الخصائص الوظيفية الرئيسية
| الخصائص | المواصفات |
|---|---|
| نوع الواجهة | 8 بت متوازية (دبابيس عنوان/بيانات/تحكم متوافقة مع CMOS) |
| توافق عائلة المنطق | TI 74HC/74HCT CMOS, 54LS TTL (دعم نظام الإشارات المختلطة القديمة) |
| هامش الضوضاء (الحد الأدنى) | 0.4 فولت (مستوى منخفض)؛ 0.5 فولت (مستوى عالٍ) (ثبات من الدرجة الصناعية) |
| تيار محرك الإخراج | -8 مللي أمبير (بالوعة)؛ +4 مللي أمبير (مصدر) (نموذجي، متوافق مع CMOS) |
| Hermeticity Standard | MIL-STD-883 Method 1014 (vacuum-sealed against moisture/contaminants) |
مزايا تتفوق على حلول الذاكرة القديمة البديلة
The SMJ68CE16S-35JDM outperforms generic SRAMs and plastic-packaged alternatives, starting with its hermetic JDM-32 package. Unlike plastic DIPs (which degrade in 2–3 years due to moisture), its ceramic enclosure and vacuum seal ensure 10+ years of reliability. “We swapped plastic SRAMs for this model in our military radar data loggers—field failures dropped from 18% to 0%,” reports a senior engineer at a leading defense contractor.
🔥 المنتجات الأكثر مبيعًا
Its 35ns access time is 40% faster than slower 60ns SRAMs, eliminating data lag in high-speed systems like 30MHz PLCs. This speed ensures real-time sensor data capture, critical for industrial quality control where missed data points cause defects. As a CMOS SRAM, it uses 70% less power than TTL alternatives (90mW vs. 300mW), extending battery life in portable test tools by 35%.
The JDM-32’s J-lead design creates stronger solder joints than standard through-hole pins, reducing vibration-induced failures in automotive or aerospace systems. Unlike modern surface-mount SRAMs, it fits legacy PCBs designed for J-lead packages—avoiding costly redesigns or adapter boards. Its -55°C to +125°C range also outperforms commercial-grade SRAMs (0°C–70°C), working reliably in freezing arctic sensors or hot desert-based equipment.
🌟 المنتجات المميزة
Typical Applications of SMJ68CE16S-35JDM
The SMJ68CE16S-35JDM excels in legacy and mission-critical systems where ruggedness, speed, and compatibility are non-negotiable. Key use cases include:
- Aerospace and Defense (avionics data buffers, missile guidance system memory, satellite ground station loggers)
- Industrial Automation (legacy PLCs, high-speed factory machine controllers, high-temperature process data loggers)
- Test and Measurement (ruggedized signal generators, environmental stress test equipment, legacy oscilloscope memory)
- Energy and Power (oil/gas well monitoring controllers, high-voltage substation data processors, wind turbine sensor memory)
- Security and Surveillance (military perimeter sensor data buffers, legacy outdoor camera recording modules)
خبرات شركة تكساس إنسترومنتس في ذاكرة CMOS المحكمية
As a Texas Instruments product, the SMJ68CE16S-35JDM leverages TI’s 70+ years of leadership in industrial and military-grade semiconductors. TI’s hermetic CMOS SRAMs undergo rigorous testing to meet strict standards: temperature cycling (-55°C to +125°C), humidity resistance (85% RH, 85°C), and electrostatic discharge (ESD) protection (2kV human-body model). This commitment to durability has made TI a trusted partner for Boeing, Siemens, and Lockheed Martin—all of which rely on TI’s legacy memory components to maintain critical older systems that cannot be easily replaced.
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الأسئلة المتداولة (FAQ)
What is a 128K×8 SRAM, and how does the SMJ68CE16S-35JDM work?
A 128K×8 SRAM stores 131,072 (128K) independent 8-bit data values (1024 Kbits total) and allows fast read/write access without power refresh. The SMJ68CE16S-35JDM uses CMOS technology: address pins select a memory location, data pins transfer 8-bit data, and control pins (chip enable, write enable) manage access. Its 35ns speed ensures data is processed quickly for real-time legacy systems like radar loggers.
Why is 35ns access time important for aerospace data loggers?
Aerospace data loggers capture high-speed sensor data (e.g., flight telemetry) at rates up to 30,000 samples per second. A 35ns access time means the SRAM can store one sample in 35 billionths of a second—fast enough to avoid buffer overflow. Slower 60ns SRAMs would drop 25% of samples, creating critical gaps in flight test data that could hide safety issues.
How does the JDM-32 package improve reliability in vibration-prone environments?
The JDM-32’s J-lead pins fold under the package, creating a larger solder joint area with the PCB than standard straight pins. This design absorbs vibration (e.g., in aircraft or factory robots) that would crack straight-pin solder joints. In testing, J-lead joints lasted 5x longer than standard joints in high-vibration conditions, reducing unplanned downtime for critical equipment.
What benefits does CMOS technology offer over TTL for this SRAM?
CMOS technology cuts power use by 70% (90mW vs. 300mW for TTL), which is vital for battery-powered test tools or energy-constrained industrial systems. It also provides better noise margin (0.4V–0.5V vs. 0.3V for TTL), making the SRAM more resistant to electrical interference in factory floors or radar systems—reducing data corruption errors by 40%.
Is the SMJ68CE16S-35JDM compatible with legacy mixed-signal systems?
Yes. It works with both TI’s 74HC/74HCT CMOS and 54LS TTL logic families, thanks to CMOS-compatible input/output levels and wide noise margin. This makes it a drop-in replacement for older SRAMs in mixed-signal systems (e.g., TTL controllers paired with CMOS sensors), avoiding costly PCB redesigns or logic level translators. It also fits existing JDM-32 sockets, simplifying maintenance.
