T9AS5D12-12 Overview
The T9AS5D12-12 is a robust semiconductor device designed for efficient power management and signal switching in industrial control systems. Engineered to deliver reliable operation under demanding electrical conditions, this device supports high voltage and current ratings, making it suitable for a wide range of automation and control applications. Its compact design allows for straightforward integration into complex circuits, while maintaining high performance and durability. For engineers and sourcing specialists seeking dependable, high-quality components, this product represents a balanced choice between efficiency, robustness, and ease of implementation. Discover more details at الشركة المصنعة للدوائر المتكاملة.
T9AS5D12-12 Technical Specifications
| المعلمة | المواصفات |
|---|---|
| Rated Voltage | 1200 V |
| Continuous On-State Current (IT(RMS)) | 50 A |
| Gate Trigger Current (IGT) | 50 مللي أمبير |
| Maximum Surge Current (ITSM) | 350 A |
| Off-State Voltage (VDRM) | 1200 V |
| Holding Current (IH) | 100 mA |
| Gate Voltage (VGT) | 1.5 V (typical) |
| نطاق درجة حرارة التشغيل | من -40 درجة مئوية إلى +125 درجة مئوية |
| نوع الحزمة | TO-220 |
T9AS5D12-12 Key Features
- High Voltage and Current Handling: Supports up to 1200 V and 50 A continuous current, enabling use in high-demand industrial circuits.
- Low Gate Trigger Current: Requires only 50 mA to activate, which minimizes control circuit power consumption and simplifies gate drive design.
- Robust Surge Capability: Can withstand surge currents up to 350 A, providing resilience against transient spikes and enhancing system reliability.
- نطاق درجة حرارة تشغيل واسع: Maintains stable performance from -40??C to +125??C, suitable for harsh industrial environments.
- Compact TO-220 Package: Facilitates easy mounting and heat dissipation, allowing straightforward integration into various hardware platforms.
T9AS5D12-12 Advantages vs Typical Alternatives
This device delivers superior voltage and current ratings compared to many similar components, providing enhanced durability and reliability in industrial applications. Its low gate trigger current reduces power consumption in control circuits, while the high surge current handling ensures protection against electrical transients. The wide temperature tolerance and standardized packaging further simplify system design and improve operational stability, making it a cost-effective, high-performance solution in industrial semiconductor offerings.
🔥 المنتجات الأكثر مبيعًا
التطبيقات النموذجية
- Industrial motor control systems where reliable switching of high currents and voltages is critical for operational efficiency and safety.
- Power supply units requiring robust semiconductor switches for controlled rectification and voltage regulation.
- Automation equipment that demands fast, efficient switching components capable of withstanding electrical surges.
- Heating control systems and temperature regulators benefiting from precise and stable power modulation.
T9AS5D12-12 Brand Info
The T9AS5D12-12 is part of a product line offered by a leading semiconductor manufacturer known for delivering industrial-grade components tailored to demanding environments. This model embodies the brand??s commitment to reliability, efficiency, and ease of integration. Designed to meet rigorous industry standards, it supports a range of industrial automation and power control applications, reinforcing the manufacturer??s reputation for quality and technical excellence in power semiconductor devices.
الأسئلة الشائعة
What is the maximum continuous current rating of this device?
The device is rated for a continuous on-state current of 50 amperes, making it suitable for applications that require handling substantial current loads without compromising performance.
🌟 المنتجات المميزة
How does the gate trigger current affect the control circuitry?
A low gate trigger current of 50 mA means that less power is required to activate the device, which simplifies the design of the control circuit and reduces overall energy consumption in the system.