JAN2N1613L-Transistor Overview
The JAN2N1613L transistor is a silicon NPN bipolar junction transistor designed for high-reliability applications requiring robust switching and amplification capabilities. It features a high collector current and voltage rating, making it suitable for industrial and military-grade circuits demanding consistent performance under varied operating conditions. The device’s rugged construction supports long-term stability, ensuring dependable operation in demanding environments. Engineers and sourcing specialists will appreciate its proven track record in applications where precision and durability are critical. This transistor is available through الشركة المصنعة للدوائر المتكاملة, offering trusted quality and compliance with stringent standards.
JAN2N1613L-Transistor Technical Specifications
| المعلمة | القيمة | الوحدة |
|---|---|---|
| جهد المُجمِّع-المرسل (Vالرئيس التنفيذي) | 80 | V |
| جهد المجمع-القاعدة المجمِّع (Vالبنك المركزي العماني) | 100 | V |
| جهد الباعث-القاعدة (VEBO) | 5 | V |
| تيار المُجمِّع (IC) | 3 | A |
| تبديد الطاقة (PD) | 30 | W |
| كسب التيار المستمر (حفي) | 40?C160 | (typical range) |
| تردد الانتقال (وT) | 100 | ميجا هرتز |
| درجة حرارة تقاطع التشغيل (TJ) | -65 إلى +200 | ??C |
JAN2N1613L-Transistor Key Features
- High voltage and current handling capacity: Supports up to 80 V collector-emitter voltage and 3 A collector current, enabling reliable operation in power-intensive circuits.
- نطاق واسع لدرجات حرارة التشغيل: Functions effectively from -65??C to +200??C, ensuring stability in harsh environments and military applications.
- Robust power dissipation rating: With a maximum of 30 W, it allows efficient heat management and continuous operation without thermal failure.
- Consistent DC current gain: Maintains a typical hFE range of 40 to 160, providing predictable amplification suitable for precision analog and switching tasks.
التطبيقات النموذجية
- High-reliability switching circuits in industrial control systems requiring sustained current and voltage performance.
- Amplifier stages in military and aerospace electronics where temperature extremes and durability are critical.
- Power regulation and driver circuits in automotive and industrial automation environments.
- Signal amplification in instrumentation and sensor interfacing, ensuring accurate data processing in harsh conditions.
JAN2N1613L-Transistor Advantages vs Typical Alternatives
This transistor offers superior reliability and high power handling compared to standard small-signal transistors. Its broad temperature tolerance and elevated voltage ratings make it ideal for demanding industrial and military applications. The device??s consistent gain and robust packaging reduce failure rates, enhancing system longevity and reducing maintenance costs. These advantages make it a preferred choice where precise switching and amplification under extreme conditions are required.
🔥 المنتجات الأكثر مبيعًا
JAN2N1613L-Transistor Brand Info
The JAN2N1613L is a product originally defined under the Joint Army-Navy (JAN) military specification, indicating stringent quality controls and reliability standards. It is commonly manufactured and supplied by specialized semiconductor producers adhering to MIL-SPEC requirements. These manufacturers focus on producing transistors that meet rigorous testing for electrical and environmental parameters, ensuring the device??s suitability for aerospace, defense, and industrial use. The JAN prefix signifies trusted military-grade performance, backed by detailed qualification and traceability procedures.
الأسئلة الشائعة
ما الحد الأقصى لمعدل تيار المجمع الأقصى لهذا الترانزستور؟
The transistor supports a maximum collector current of 3 amperes, allowing it to handle moderate power loads in switching and amplification applications without compromising reliability.
🌟 المنتجات المميزة
Can this transistor operate in high-temperature environments?
Yes, it is designed to operate within a wide junction temperature range from -65??C up to +200??C, making it suitable for applications exposed to extreme thermal conditions.
What voltage levels can the transistor withstand?
إن
