CHD1616LVB-70Z Overview
The CHD1616LVB-70Z is a high-performance, low-voltage CMOS static RAM designed to deliver reliable memory storage with optimized power consumption. Featuring a 16K x 16-bit organization and a 70 ns access time, this device is ideal for applications requiring fast and efficient data access. It supports a broad voltage range and includes advanced control circuitry for seamless integration in industrial and embedded systems. Engineers and sourcing specialists will find this memory solution well-suited for systems demanding compact, low-power, and high-speed SRAM modules. For more detailed technical and sourcing information, visit the الشركة المصنعة للدوائر المتكاملة website.
CHD1616LVB-70Z Technical Specifications
| المعلمة | المواصفات |
|---|---|
| حجم الذاكرة | 16K x 16 bits (262,144 bits) |
| وقت الوصول | 70 ns |
| جهد التشغيل | 3.0 V to 3.6 V (Low Voltage CMOS) |
| Data Retention Voltage | 1.5 V minimum |
| Standby Current | 5 ??A (typical) |
| نطاق درجة حرارة التشغيل | 0??C to +70??C |
| نوع الحزمة | 44-pin Plastic SOJ |
| Input/Output Type | TTL compatible |
| Data Bus Width | 16 بت |
| Write Cycle Time | Minimum 100 ns |
CHD1616LVB-70Z Key Features
- Low Voltage Operation: Supports a 3.3 V supply voltage, reducing power consumption and heat generation, which is critical in portable and battery-powered applications.
- Fast Access Time of 70 ns: Enables quick data retrieval, improving overall system performance in time-sensitive computing environments.
- Wide Temperature Range: Operates reliably from 0??C to 70??C, ensuring stable functionality in standard industrial conditions.
- Low Standby Current: Minimizes power usage during idle periods, enhancing energy efficiency in embedded systems.
- TTL Compatible Inputs and Outputs: Allows for straightforward integration with standard digital logic circuits, simplifying system design.
- Robust Package: Comes in a 44-pin SOJ package that offers durability and ease of installation in dense PCB layouts.
- Data Retention at Low Voltage: Maintains stored data down to 1.5 V, providing data integrity during power fluctuations or partial shutdowns.
CHD1616LVB-70Z Advantages vs Typical Alternatives
This SRAM module offers a competitive edge through its low-voltage CMOS design, providing significant power savings compared to traditional 5 V devices. Its 70 ns access time is well-matched for high-speed applications, while the low standby current improves energy efficiency. The wide operating temperature range and TTL-compatible I/O further enhance integration flexibility and reliability, making it a preferred choice over typical SRAMs lacking these balanced performance and power characteristics.
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التطبيقات النموذجية
- Embedded Systems: Ideal for microcontroller-based applications requiring fast, reliable, and low-power memory storage within industrial automation or consumer electronics.
- Data Buffering: Efficiently supports temporary data storage in communication devices and digital signal processing systems.
- Cache Memory: Suitable for use as cache memory in digital computing platforms to boost processing speed.
- Portable Devices: Enables extended battery life and stable operation in handheld and portable electronic devices due to its low-voltage and low-power features.
CHD1616LVB-70Z Brand Info
Manufactured by a leading الشركة المصنعة للدوائر المتكاملة, the CHD1616LVB-70Z embodies quality and reliability typical of their semiconductor memory portfolio. This product leverages advanced CMOS technology to optimize power efficiency and operational speed, supporting diverse industrial and commercial applications. The brand is recognized for strict quality control and comprehensive technical support, ensuring that engineers and sourcing specialists receive dependable components for their design and production needs.
الأسئلة الشائعة
What is the typical power consumption of this SRAM during standby mode?
The standby current for this SRAM is typically 5 ??A, which helps
