2N6352-Darlington Transistor by ON Semiconductor – High Gain, TO-220 Package

  • This device amplifies weak electrical signals into stronger currents, enabling efficient control in high-power circuits.
  • Featuring a Darlington transistor configuration, it provides high current gain for improved switching performance.
  • The compact package supports efficient board-space usage, facilitating integration into densely populated electronic assemblies.
  • Ideal for driving motors or relays, it enhances response and control in industrial automation systems.
  • Designed for durability, the component ensures consistent operation under varied electrical loads and environmental conditions.
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2N6352-Darlington Overview

The 2N6352-Darlington transistor is a high-voltage, high-current NPN power transistor designed for demanding industrial applications. Featuring a Darlington configuration, it offers superior current gain and enhanced switching performance. This device operates efficiently at voltages up to 120V and collector currents up to 10A, making it suitable for power amplification and switching in heavy-duty circuits. Its robust construction ensures reliable operation under thermal stress, ideal for industrial control systems, motor drivers, and power regulators. For detailed technical support and sourcing, visit الشركة المصنعة للدوائر المتكاملة.

2N6352-Darlington Key Features

  • High Current Gain: The Darlington pair configuration provides a large current amplification, simplifying driver circuitry and reducing input current requirements.
  • القدرة على الجهد العالي: With a maximum collector-emitter voltage rating of 120V, it supports a wide range of industrial power applications requiring high voltage handling.
  • Robust Power Dissipation: Designed to handle significant power dissipation, this transistor maintains reliable performance under high-load conditions and thermal stress.
  • Fast Switching Speeds: Suitable for switching applications, the device offers efficient transition times, enhancing overall circuit responsiveness and reducing power losses.

2N6352-Darlington Technical Specifications

المعلمة المواصفات
جهد المُجمِّع-المرسل (Vالرئيس التنفيذي) 120 V
تيار المُجمِّع (IC) 10 A (continuous)
تبديد الطاقة (PD) 115 W (at 25??C)
كسب التيار المستمر (حفي) Minimum 1000 at IC = 3A
تردد الانتقال (وT) 4 MHz (typical)
جهد المجمع-القاعدة المجمِّع (Vالبنك المركزي العماني) 120 V
جهد الباعث-القاعدة (VEBO) 5 V
درجة حرارة تقاطع التشغيل (TJ) -65??C to +200??C

2N6352-Darlington Advantages vs Typical Alternatives

This Darlington transistor excels with its exceptionally high current gain and power handling capabilities compared to typical single-transistor solutions. Its ability to operate at elevated voltages and currents with improved switching efficiency reduces the need for complex driver circuits. Reliability under thermal stress and robust packaging further enhance its suitability for industrial environments, delivering consistent performance where alternatives may fall short.

التطبيقات النموذجية

  • Power Amplification: Ideal for driving high-current loads in industrial amplifiers, providing reliable gain and long-term stability under heavy load conditions.
  • Motor Control: Used in motor driver circuits for industrial machinery, enabling efficient switching and control of DC and stepper motors.
  • Relay and Solenoid Drivers: Suitable for energizing electromechanical components with high current demands, ensuring precise control and durability.
  • Switching Regulators: Employed in power supply circuits for switching regulation, benefiting from fast response times and robust voltage handling.

2N6352-Darlington Brand Info

The 2N6352-Darlington transistor is a well-established product within the power transistor segment, recognized for its reliability and performance in industrial applications. Manufactured under stringent quality standards, this device meets the demands of engineers requiring robust, high-gain components for power switching and amplification. Its compatibility with industry-standard packages allows seamless integration into existing designs, supported by comprehensive datasheets and technical documentation from the supplier.

الأسئلة الشائعة

What makes the 2N6352 suitable for high-power applications?

The transistor??s high collector current rating of 10A and power dissipation capability up to 115W enable it to handle substantial loads without overheating. Additionally, the Darlington configuration provides high current gain, reducing the necessary base drive current and improving overall efficiency in power circuits.

Can this transistor operate at high temperatures?

Yes, the device supports an operating junction temperature range from -65??C to +200??C, making it suitable for harsh industrial environments where temperature extremes are common. This ensures reliable performance and longevity in demanding applications.

How does the Darlington configuration improve performance?

The Darlington setup combines two transistors to significantly increase current gain, allowing the device to amplify small input currents into much larger output currents. This reduces the load on preceding circuit stages and simplifies the design of driver circuits.

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What are the voltage limits for this transistor?

The 2N6352 has a maximum collector-emitter voltage of 120V and a collector-base voltage of 120V. The emitter-base voltage is rated at 5V. Staying within these limits ensures safe and reliable operation without risk of breakdown.

Is it suitable for switching applications?

Yes, with a typical transition frequency around 4 MHz and fast switching characteristics inherent to the Darlington design, this transistor is well-suited for switching regulators, relay drivers, and other applications requiring rapid on/off control.

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