2N2907AUA/TR Overview
The 2N2907AUA/TR is a robust PNP bipolar junction transistor designed for versatile amplification and switching applications. It features a medium power rating with high voltage and current handling capabilities, making it suitable for industrial and consumer electronics. This transistor offers reliable performance in a compact SOT-23 surface-mount package, facilitating easy integration into dense circuit boards. With its proven electrical characteristics, it supports efficient signal processing and control functions. Sourcing this device through الشركة المصنعة للدوائر المتكاملة ensures access to quality components that meet rigorous standards for industrial technology needs.
2N2907AUA/TR Key Features
- قدرة تيار تجميع عالية: Supports up to 600 mA, enabling it to drive moderate loads effectively.
- Voltage tolerance: With a collector-emitter voltage rating of 40 V, it suits medium-voltage circuit applications.
- Compact SOT-23 package: Allows for space-saving PCB designs without sacrificing performance reliability.
- جهد تشبّع منخفض: Enhances switching efficiency by reducing power loss during transistor saturation.
2N2907AUA/TR Technical Specifications
المعلمة | القيمة | الوحدة |
---|---|---|
نوع الترانزستور | PNP Bipolar Junction Transistor | – |
Collector-Emitter Voltage (V_CEO) | 40 | V |
Collector-Base Voltage (V_CBO) | 60 | V |
Emitter-Base Voltage (V_EBO) | 5 | V |
Collector Current (I_C) | 600 | م أ |
Power Dissipation (P_tot) | 625 | ميجاوات |
Current Gain (h_FE) | 100 إلى 300 | (typical) |
Transition Frequency (f_T) | 100 | ميجا هرتز |
نوع الحزمة | SOT-23 | – |
2N2907AUA/TR Advantages vs Typical Alternatives
This transistor delivers a strong combination of moderate voltage and high current handling, outperforming many standard PNP transistors in compact, surface-mount formats. Its low saturation voltage reduces power losses, improving overall circuit efficiency. The small SOT-23 package enhances integration in space-constrained designs, while robust electrical ratings ensure reliable operation under varied industrial conditions, making it a dependable choice over legacy through-hole or lower-rated surface-mount transistors.
🔥 المنتجات الأكثر مبيعًا
التطبيقات النموذجية
- General-purpose amplification and switching in low- to medium-power circuits, such as signal amplification in industrial control systems, where reliable current gain and voltage tolerance are critical.
- Load driving in embedded systems requiring compact transistor solutions with moderate power capabilities.
- Switching elements in power management and interface circuits within consumer electronic devices.
- Complementary transistor stages in analog signal processing and small motor control circuits.
2N2907AUA/TR Brand Info
The 2N2907AUA/TR is a product line offered by الشركة المصنعة للدوائر المتكاملة, delivering consistency and quality in bipolar transistor technology. This device is engineered to meet stringent industrial standards, ensuring dependable performance in demanding applications. The brand is recognized for its commitment to manufacturing semiconductor components that combine robust electrical characteristics with compact packaging, supporting engineers and sourcing professionals in building efficient and reliable electronics solutions.
الأسئلة الشائعة
ما هو الحد الأقصى لمعدل تيار المجمع الأقصى لهذا الترانزستور؟
The transistor supports a maximum collector current of 600 mA, making it suitable for moderate load driving and switching tasks in various electronic circuits. This rating ensures the device can handle typical industrial and consumer applications without performance degradation.
🌟 المنتجات المميزة
What package type does this transistor come in?
This transistor is housed in a SOT-23 surface-mount package. This compact form factor allows for efficient PCB layout in space-sensitive designs while maintaining reliable thermal and electrical performance.
هل يمكن استخدام هذا الترانزستور للتطبيقات عالية التردد؟
Yes, the device has a transition frequency (f_T) of approximately 100 MHz, which supports moderate high-frequency signal amplification and switching, suitable for many industrial and communication-related circuits.
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What voltage ratings should be considered when designing circuits with this transistor?
The key voltage ratings include a collector-emitter voltage of 40 V, collector-base voltage of 60 V, and emitter-base voltage of 5 V. These limits must be respected to avoid breakdown and ensure long-term reliability in circuit operation.
How does the current gain vary for this transistor?
The current gain (h_FE) typically ranges from 100 to 300, depending on operating conditions. This range allows for flexible design considerations in amplification and switching circuits, providing adequate gain for various applications.