2N2484UA-Transistor by ON Semiconductor – NPN Power Transistor, TO-3 Package

  • This transistor amplifies electrical signals, enabling efficient control in various electronic circuits.
  • It features a specified voltage rating that ensures stable operation under typical load conditions.
  • The compact package design offers board-space savings, facilitating integration into dense circuit layouts.
  • Ideal for switching applications, it enhances performance by providing reliable response times and signal integrity.
  • Manufactured with quality standards that promote consistent reliability and long-term operational stability.
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2N2484UA-Transistor Overview

The 2N2484UA is a high-performance NPN bipolar junction transistor designed for medium-power amplification and switching applications. Featuring a balanced combination of voltage handling and gain characteristics, this transistor is well-suited for analog and digital circuits requiring reliable operation under moderate current and voltage conditions. Its robust design ensures consistent performance in industrial and commercial electronics. With a maximum collector-emitter voltage rating and stable gain parameters, this transistor offers engineers a dependable component for designing efficient, low-noise amplifiers and switching circuits. Visit الشركة المصنعة للدوائر المتكاملة for detailed datasheets and procurement options.

2N2484UA-Transistor Key Features

  • High voltage capability: Supports a collector-emitter voltage up to 80V, enabling use in diverse voltage domains.
  • Moderate collector current: Handles currents up to 1A, suitable for medium power amplification and switching.
  • Low noise operation: Ideal for audio frequency amplification due to minimal signal distortion.
  • Complementary gain: Provides stable DC gain (hFE) between 40 and 240, ensuring predictable amplification.
  • ثبات حراري: Designed to maintain performance across varying temperature ranges, enhancing reliability.
  • Standard TO-39 metal can package: Facilitates efficient heat dissipation and easy integration into PCB layouts.

2N2484UA-Transistor Technical Specifications

المعلمة القيمة الوحدة
جهد المُجمِّع-المرسل (Vالرئيس التنفيذي) 80 V
جهد المجمع-القاعدة المجمِّع (Vالبنك المركزي العماني) 100 V
جهد الباعث-القاعدة (VEBO) 5 V
تيار المُجمِّع (IC) 1.0 A
تبديد الطاقة (Pالمجموع) 1.0 W
كسب التيار المستمر (حفي) 40 to 240 ??
تردد الانتقال (وT) 40 ميجا هرتز
درجة حرارة تقاطع التشغيل (TJ) -65 إلى +200 ??C
الحزمة TO-39 ??

2N2484UA-Transistor Advantages vs Typical Alternatives

This transistor stands out by combining a high collector-emitter voltage rating with a moderate current capacity, making it suitable for a wide range of medium power applications. Its superior gain range supports precision amplification compared to generic transistors with lower gain stability. The TO-39 metal can package ensures better thermal management than plastic-encapsulated alternatives, increasing device longevity and reliability in industrial environments. These advantages make it a preferred choice for engineers prioritizing consistent performance and durability in their designs.

التطبيقات النموذجية

  • Audio signal amplification: The low noise and stable gain characteristics enable clean amplification in audio preamplifiers and other analog circuits.
  • Switching circuits: Operates effectively in switching applications requiring moderate currents and voltages, such as relay drivers and signal control.
  • Voltage regulation: Utilized in linear voltage regulators due to its predictable gain and voltage handling capabilities.
  • Industrial control systems: Suitable for use in sensor interfaces and control signal amplification where robust performance is essential.

2N2484UA-Transistor Brand Info

The 2N2484UA transistor is a widely recognized product offered by established semiconductor manufacturers specializing in discrete components. Known for their consistent quality and thorough testing, these manufacturers ensure the transistor meets stringent industry standards. The product is typically available through authorized distributors and supports various industrial and commercial electronics markets. Its longstanding presence in the market reflects its reliability and suitability for applications requiring medium power amplification and switching.

الأسئلة الشائعة

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The maximum collector current for this device is 1.0 ampere. This current rating makes it suitable for medium-power applications, balancing performance with thermal constraints inherent to the TO-39 package.

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With a transition frequency of approximately 40 MHz, this transistor is suitable for moderate frequency applications but may not be optimal for very high-frequency RF circuits. It performs well in audio and low to medium frequency analog designs.

What type of packaging does the transistor use?

This transistor comes in a TO-39 metal can package, which provides enhanced thermal dissipation and mechanical durability compared to plastic encapsulated transistors, making it reliable in industrial environments.

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Is the transistor suitable for switching applications?

Yes, it supports switching operations with collector currents up to 1A and collector-emitter voltages up to 80V. This makes it appropriate for relay driving, signal switching, and other control circuit roles.

What is the typical DC current gain range of this transistor?

The typical DC current gain (hFE) ranges from 40 to 240, offering versatile gain options for amplifiers and allowing engineers to select the device for both low and moderate gain requirements.

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