2N2432AUB-Transistor NPN Amplifier Transistor in TO-18 Metal Can Package by ON Semiconductor

  • This transistor amplifies electrical signals, enabling precise control in electronic circuits.
  • It features a voltage rating suitable for handling common signal levels safely and efficiently.
  • The compact package design ensures easy integration and conserves valuable board space.
  • Ideal for switching applications in low-power devices, enhancing response time and efficiency.
  • Manufactured to meet industry standards, ensuring consistent performance and long-term reliability.
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2N2432AUB-Transistor Overview

The 2N2432AUB transistor is a robust bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. Its NPN configuration offers reliable performance in low to medium power circuits, making it suitable for industrial and commercial electronics. With a focus on stable gain and voltage ratings, this transistor supports efficient signal processing and control functions. Engineers and sourcing specialists benefit from its proven design and compatibility with a wide range of circuit environments. For trusted semiconductor components, visit الشركة المصنعة للدوائر المتكاملة to explore availability and technical support.

2N2432AUB-Transistor Technical Specifications

المعلمة المواصفات
نوع الترانزستور NPN Bipolar Junction Transistor
جهد المُجمِّع-المرسل (Vالرئيس التنفيذي) 40 V
جهد المجمع-القاعدة المجمِّع (Vالبنك المركزي العماني) 60 V
جهد الباعث-القاعدة (VEBO) 5 V
تيار المُجمِّع (IC) 600 mA
تبديد الطاقة (Pالمجموع) 625 mW
كسب التيار المستمر (حفي) 40 to 300
تردد الانتقال (وT) 50 ميجاهرتز
نوع الحزمة علبة TO-18 معدنية

2N2432AUB-Transistor Key Features

  • Wide voltage tolerance: Supports collector-emitter voltages up to 40 V, enabling use in various low to medium voltage circuits.
  • قدرة تيار عالي: Handles collector currents up to 600 mA, suitable for moderate power amplification and switching tasks.
  • Stable DC gain range: Offers a broad current gain (hفي) between 40 and 300, ensuring flexible amplification characteristics for diverse circuit requirements.
  • High transition frequency: With an fT of 50 MHz, the device supports applications requiring moderate high-frequency response.
  • Durable TO-18 packaging: The metal can package enhances thermal dissipation and mechanical robustness for reliable long-term operation.

التطبيقات النموذجية

  • General-purpose amplification in audio, signal processing, and control circuits where reliable NPN transistor performance is required.
  • Switching applications in industrial control systems that demand moderate current and voltage handling capability.
  • Signal modulation and driver stages in low to medium frequency analog circuits.
  • Educational and prototyping platforms for electronics engineers requiring a versatile, well-characterized transistor.

2N2432AUB-Transistor Advantages vs Typical Alternatives

This transistor provides a balanced combination of voltage rating, current capacity, and gain stability that outperforms many general-purpose alternatives. Its robust metal can packaging improves thermal management, enhancing reliability in demanding environments. The wide gain range and moderate transition frequency offer versatility in both amplification and switching roles, making it a preferred choice for engineers seeking dependable performance without sacrificing durability or integration ease.

2N2432AUB-Transistor Brand Info

The 2N2432AUB transistor is part of a well-established family of discrete bipolar transistors originally popularized by semiconductor manufacturers such as Motorola and ON Semiconductor. This product maintains legacy compatibility, often sourced through reputable suppliers offering tested and certified components. The TO-18 package and classic specifications ensure broad acceptance across multiple industrial sectors, including automotive, instrumentation, and consumer electronics. The transistor continues to be supported by key IC manufacturers known for quality and consistency.

الأسئلة الشائعة

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The maximum collector current rating is 600 mA. This rating allows the transistor to handle moderate power levels in amplification and switching applications without exceeding safe operating limits.

Can this transistor be used in high

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