JANTXVE2N2907A-Transistor Overview
The JANTXVE2N2907A is a high-reliability PNP bipolar junction transistor (BJT) designed for industrial and military-grade applications. It offers robust switching and amplification capabilities with a collector current rating of up to 1 ampere and a collector-emitter voltage of 60 volts. This transistor operates efficiently under stringent conditions, providing stable performance in power amplification, signal switching, and general-purpose transistor applications. Engineered to meet rigorous JEDEC standards, it is an ideal choice for engineers and sourcing specialists requiring dependable, long-life components from a trusted source like IC Manufacturer.
JANTXVE2N2907A-Transistor Key Features
- High Collector Current Handling: Supports up to 1A collector current, enabling effective power switching and amplification in demanding circuits.
- Moderate Voltage Rating: Collector-emitter voltage of 60V ensures suitability for medium-voltage applications, enhancing design flexibility.
- Robust Gain Characteristics: Offers a DC current gain (hFE) typically between 40 to 250, facilitating efficient signal amplification and control.
- Durable Package: Encapsulated in a TO-18 metal can package, providing excellent thermal dissipation and mechanical protection.
JANTXVE2N2907A-Transistor Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Transistor Type | PNP Bipolar Junction Transistor | |
| Collector-Emitter Voltage (Vce) | 60 | V |
| Collector Current (Ic) | 1 | A |
| DC Current Gain (hFE) | 40 to 250 | |
| Power Dissipation (Pd) | 800 | mW |
| Transition Frequency (fT) | 100 | MHz |
| Emitter-Base Voltage (Veb) | 5 | V |
| Package | TO-18 Metal Can | |
| Operating Temperature Range | -65 to +200 | ??C |
JANTXVE2N2907A-Transistor Advantages vs Typical Alternatives
This transistor excels with its robust collector current capacity and moderate voltage ratings, offering reliable switching and amplification compared to general-purpose transistors. Its metal can TO-18 package enhances thermal management and durability, making it more reliable under harsh conditions than plastic-encapsulated alternatives. The broad gain range and high-frequency performance provide improved sensitivity and signal integrity, ensuring accuracy in critical industrial and military applications.
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Typical Applications
- Power amplification circuits requiring stable gain and current capacity, such as audio amplifiers and signal drivers in industrial control systems.
- Switching applications in relay drivers and electronic switches where reliable, high-current operation is essential.
- General-purpose amplification and signal processing in instrumentation and measurement devices.
- Military and aerospace systems demanding components qualified for extended temperature ranges and rigorous operational standards.
JANTXVE2N2907A-Transistor Brand Info
The JANTXVE2N2907A is part of the JANTX series, known for military-grade semiconductor devices that meet strict quality and reliability standards. This transistor is manufactured under rigorous screening and testing protocols to ensure performance consistency in critical applications. The brand is recognized for delivering components suitable for high-reliability environments, supporting engineers and sourcing specialists who prioritize durability and compliance with industry certifications.
FAQ
What type of transistor is the JANTXVE2N2907A?
The JANTXVE2N2907A is a PNP bipolar junction transistor designed for medium power amplification and switching applications. It features a metal can TO-18 package for enhanced durability.
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What are the maximum voltage and current ratings for this transistor?
This transistor supports a maximum collector-emitter voltage of 60 volts and a collector current up to 1 ampere, making it suitable for a variety of industrial and military circuits.
How does the packaging affect its performance?
The TO-18 metal can package offers improved thermal dissipation and mechanical protection compared to plastic packages, enhancing reliability especially in harsh or high-temperature environments.
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What is the typical gain range of this transistor?
The DC current gain (hFE) ranges typically between 40 and 250, providing flexibility for different amplification needs and allowing for accurate control in signal processing.
Is this transistor suitable for high-frequency applications?
Yes, with a transition frequency (fT) of approximately 100 MHz, this transistor can handle moderate high-frequency signals, making it applicable in many communication and control systems.
