JAN2N6676T1-Transistor NPN Amplifier Transistor in TO-92 Package by JAN2N6676T1

JAN2N6676T1-Transistor Overview

The JAN2N6676T1 transistor is a high-performance bipolar junction transistor (BJT) designed for military and industrial applications requiring robust switching and amplification capabilities. Featuring a maximum collector current rating of 10A and a collector-emitter voltage of 80V, it supports demanding power handling in harsh environments. Its TO-3 metal can package ensures excellent thermal dissipation and mechanical durability. This transistor is ideal for use in high-reliability circuits such as military-grade power amplifiers, motor control, and industrial switching systems. For detailed specifications and sourcing, visit IC Manufacturer.

JAN2N6676T1-Transistor Key Features

• High Current Handling: Supports collector currents up to 10A, enabling efficient operation in power-intensive applications.
• Robust Voltage Rating: Collector-emitter voltage rating of 80V provides ample headroom for high-voltage switching tasks.
• TO-3 Metal Can Package: Ensures superior thermal performance and mechanical stability under demanding conditions.
• Military-Grade Qualification: Complies with JAN (Joint Army-Navy) standards for reliability in extreme environments.

JAN2N6676T1-Transistor Technical Specifications

JAN2N6676T1-Transistor Advantages vs Typical Alternatives

This transistor offers enhanced power handling and thermal dissipation compared to typical silicon BJTs, thanks to its TO-3 metal can package and robust electrical ratings. Its military-grade qualification ensures superior reliability and performance in harsh environments, making it an ideal choice over standard commercial transistors where durability and longevity are critical. The wide operating temperature range and high current capacity provide engineers with a flexible solution for demanding industrial and defense applications.

Typical Applications

• Power Amplification: Ideal for high-power audio and RF amplifier stages where efficient switching and amplification are required.
• Motor Control Circuits: Supports high current loads for controlling industrial motors and actuators with precision.
• Switching Regulators: Used in DC-DC converters and voltage regulators requiring robust switching elements.
• Military Electronics: Suitable for rugged defense systems that require reliable transistor performance under extreme conditions.

JAN2N6676T1-Transistor Brand Info

The JAN2N6676T1 transistor is a military-grade component manufactured to meet strict Joint Army-Navy standards, ensuring high reliability and consistent performance. This product line is known for its durability and robustness in severe operating environments. Trusted by defense contractors and industrial engineers alike, it exemplifies quality and precision engineering with a proven track record in mission-critical applications. The TO-3 packaging and stringent testing processes reflect the brand??s commitment to excellence in semiconductor device manufacturing.

FAQ

What is the maximum collector current rating of this transistor?

The transistor supports a maximum collector current of 10 amperes, allowing it to handle substantial power loads in demanding applications such as motor control and power amplification.

Which package type does this transistor use, and why is it important?

It utilizes a TO-3 metal can package, which provides excellent thermal conductivity and mechanical strength. This packaging helps dissipate heat efficiently, improving reliability and longevity in high-power environments.

What voltage ratings should engineers be aware of when using this transistor?

The key voltage ratings include a collector-emitter voltage of 80 volts, a collector-base voltage of 100 volts, and an emitter-base voltage of 7 volts. These ratings define the maximum voltages the device can safely withstand during operation.

Is this transistor suitable for use in harsh or military environments?

Yes, it is specifically qualified to JAN military standards, ensuring reliable performance in extreme temperatures and conditions typical of defense and aerospace applications.

What is the typical DC current gain range for this transistor?

The DC current gain (hFE) for this transistor ranges from 20 to 70, which indicates its amplification capability and helps in designing efficient amplifier circuits.