JANKCDD2N5154-Transistor-Die Overview
The JANKCDD2N5154-Transistor-Die is a high-performance semiconductor component designed for precision amplification and switching in advanced electronic circuits. This die offers robust electrical characteristics suitable for a range of industrial and commercial applications, including power management and signal processing. Manufactured with stringent quality standards, it ensures consistency in operation, making it a dependable choice for engineers seeking compact and efficient transistor solutions. For sourcing and detailed technical support, visit the IC Manufacturer website.
JANKCDD2N5154-Transistor-Die Key Features
- High Current Handling Capability: Supports substantial collector current enabling reliable switching and amplification in demanding circuits.
- Low Collector-Emitter Saturation Voltage: Minimizes power losses, improving overall system efficiency and thermal management.
- Robust Breakdown Voltages: Ensures device integrity under high-voltage conditions, enhancing operational reliability.
- Optimized Die Dimensions: Facilitates integration into compact modules and supports high-density circuit designs.
JANKCDD2N5154-Transistor-Die Technical Specifications
| Parameter | Value | Unit | Notes |
|---|---|---|---|
| Collector-Emitter Voltage (VCEO) | 100 | V | Maximum voltage rating |
| Collector Current (IC) | 8 | A | Continuous current capability |
| Power Dissipation (PD) | 75 | W | Maximum power at rated conditions |
| Gain Bandwidth Product (fT) | 100 | MHz | Frequency response characteristic |
| Base-Emitter Voltage (VBE) | 1.2 | V | Typical forward voltage drop |
| Collector-Emitter Saturation Voltage (VCE(sat)) | 1.5 | V | At IC = 8 A |
| Storage Temperature Range | -55 to +150 | ??C | Safe handling and storage limits |
| Operating Junction Temperature | 150 | ??C | Maximum junction temperature |
JANKCDD2N5154-Transistor-Die Advantages vs Typical Alternatives
This transistor die delivers superior current capacity and voltage tolerance compared to many standard alternatives, which translates to enhanced reliability and efficiency in demanding industrial circuits. Its low saturation voltage lowers power dissipation, reducing heat generation and improving system longevity. The precision manufacturing and compact die size offer seamless integration into high-density applications, providing engineers with a dependable and scalable solution.
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Typical Applications
- Power Amplification: Ideal for use in amplifier circuits requiring high current gain and stable operation under varied electrical stresses.
- Switching Regulators: Serves effectively in power management circuits, ensuring efficient switching with minimal losses.
- Motor Control: Suitable for driving motors in industrial automation, leveraging its robust current handling and voltage ratings.
- Signal Processing: Employed in signal conditioning circuits where precise transistor behavior is critical for system accuracy.
JANKCDD2N5154-Transistor-Die Brand Info
This transistor die is manufactured under stringent quality protocols by a recognized semiconductor supplier focused on delivering reliable, high-performance discrete components for industrial electronics. The brand is known for its commitment to precision engineering and consistency, ensuring that each die meets rigorous specifications for electrical and thermal performance. This product line supports engineers and sourcing specialists with dependable components designed to optimize electronic system designs.
FAQ
What is the maximum collector current supported by this transistor die?
The transistor die supports a maximum continuous collector current of 8 amperes, making it suitable for applications requiring moderate to high current switching and amplification.
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What are the voltage ratings critical to safe operation?
The device has a maximum collector-emitter voltage rating of 100 volts, ensuring it can withstand high-voltage conditions without breakdown when used within specified limits.
How does the low saturation voltage benefit circuit performance?
A low collector-emitter saturation voltage reduces power losses during conduction, which improves overall efficiency and reduces heat dissipation, contributing to longer device life and better thermal management in circuits.
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Can this transistor die be used in high-frequency applications?
With a gain bandwidth product of approximately 100 MHz, this transistor die is suitable for moderately high-frequency applications, including signal processing and switching circuits requiring fast response times.
What temperature ranges can this transistor die safely operate within?
The device is rated for operation with a junction temperature up to 150??C and can be safely stored between -55??C and +150??C, providing robustness for various industrial environments.
