JAN2N6676-Transistor by JAN – High-Performance Switching Transistor, TO-92 Package

JAN2N6676-Transistor Overview

The JAN2N6676 transistor is a high-performance silicon NPN bipolar junction transistor designed for robust switching and amplification in industrial and military-grade applications. It offers reliable operation under demanding conditions with a maximum collector-emitter voltage rating of 60V and a collector current capacity of 10A. The device??s low saturation voltage and high gain characteristics ensure efficient power handling and signal integrity. Encapsulated in a rugged TO-3 metal can package, it is well-suited for high-reliability uses where thermal management and durability are critical. For detailed sourcing and technical assistance, visit IC Manufacturer.

JAN2N6676-Transistor Key Features

• High Current Handling: Supports collector currents up to 10A, enabling effective power switching in demanding circuits.
• Robust Voltage Rating: Collector-emitter voltage max of 60V ensures reliable operation in moderate-voltage applications.
• Low Saturation Voltage: Enhances efficiency by minimizing power loss during conduction phases, improving overall system performance.
• High Gain (hFE): Provides strong amplification capability, beneficial for signal processing and amplification stages.
• Thermally Efficient TO-3 Package: Metal can encapsulation supports superior heat dissipation for enhanced reliability in high-power environments.
• Military-Grade Quality: Designed to meet stringent performance and reliability standards for aerospace and defense sectors.
• Wide Operating Temperature Range: Suitable for environments with temperature extremes, ensuring stable performance.

JAN2N6676-Transistor Technical Specifications

JAN2N6676-Transistor Advantages vs Typical Alternatives

This transistor provides a distinct advantage over typical alternatives with its combination of high current capacity and voltage tolerance within a thermally efficient metal package. The low saturation voltage and wide gain range translate into improved power efficiency and better signal amplification. Its robust military-grade construction ensures superior reliability in harsh environments, making it a preferred choice for engineers requiring dependable performance without compromise on durability or thermal management.

Typical Applications

• Power amplification circuits requiring high current and voltage handling, such as industrial motor drivers and power regulators, benefit from its reliable operation and thermal stability.
• Switching applications in aerospace and defense systems where ruggedness and dependable performance under stress are critical.
• High-reliability signal amplification stages in communication equipment and instrumentation.
• Robust power control in automotive and heavy machinery electronic systems operating across wide temperature ranges.

JAN2N6676-Transistor Brand Info

This transistor is manufactured under strict quality controls adhering to military standards, ensuring dependable performance in critical applications. The product is part of a legacy line known for rugged construction and precise electrical characteristics. It is widely recognized for its suitability in demanding environments requiring stable operation over extended periods. This product line from IC Manufacturer supports engineers and sourcing specialists with comprehensive datasheets and application support for seamless integration into high-performance electronic designs.

FAQ

What is the maximum collector current rating for this transistor?

The maximum collector current rating is 10 amperes, allowing it to handle substantial load currents in power switching and amplification applications without thermal or electrical stress.

Which package type is used for this transistor and why is it important?

This device uses a TO-3 metal can package, which provides excellent thermal conductivity and mechanical durability, essential for maintaining reliability in high-power, high-temperature environments.

What is the typical DC current gain (hFE) range of this transistor?

The DC current gain ranges from 40 to 160, offering flexibility for amplification purposes and ensuring adequate gain for various signal processing applications.

Can this transistor operate in extreme temperature conditions?

Yes, it supports an operating junction temperature range from -65??C up to +200??C, making it suitable for both cold and high-temperature industrial or military environments.

How does the low saturation voltage benefit circuit performance?

Low saturation voltage reduces power losses when the transistor is in the ‘on’ state, increasing efficiency and reducing heat generation, which enhances overall system reliability and energy savings.