JANTXVE2N2907AUB-Transistor Overview
The JANTXVE2N2907AUB is a robust bipolar junction transistor (BJT) designed for general-purpose amplification and switching tasks in industrial and electronic circuits. Featuring a PNP configuration, this transistor supports medium power handling with reliable performance under various environmental conditions. It offers dependable gain characteristics and voltage ratings suitable for signal processing and control in demanding applications. Engineered with military-grade quality standards, it ensures enhanced reliability and long-term stability for critical systems. For sourcing and technical details, visit IC Manufacturer.
JANTXVE2N2907AUB-Transistor Key Features
- High voltage capability: Supports collector-emitter voltages up to 60 V, enabling use in diverse circuit designs requiring moderate voltage handling.
- Reliable gain characteristics: Offers a DC current gain (hFE) range that ensures stable amplification, critical for precision switching and signal processing.
- Military-grade construction: Manufactured to stringent standards for enhanced ruggedness and long operational life in harsh environments.
- Complementary PNP transistor: Ideal for complementary push-pull amplifier configurations when paired with NPN counterparts.
JANTXVE2N2907AUB-Transistor Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Transistor Type | PNP Bipolar Junction | ?C |
| Collector-Emitter Voltage (VCEO) | 60 | V |
| Collector-Base Voltage (VCBO) | 60 | V |
| Emitter-Base Voltage (VEBO) | 5 | V |
| Collector Current (IC) | 800 | mA |
| DC Current Gain (hFE) | 100 to 300 | ?C |
| Transition Frequency (fT) | 100 | MHz |
| Power Dissipation (Ptot) | 625 | mW |
| Operating Temperature Range | -65 to +200 | ??C |
JANTXVE2N2907AUB-Transistor Advantages vs Typical Alternatives
This transistor offers a balanced combination of voltage rating and current handling that outperforms many standard PNP devices in similar classes. Its military-grade qualification ensures superior reliability and stability under extreme temperature and mechanical stress, making it a preferred choice for high-reliability industrial and aerospace applications. With a broad gain range and adequate transition frequency, it supports precision control and switching functions more effectively than many commercial-grade transistors.
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Typical Applications
- Signal amplification in control circuits requiring stable gain and moderate power handling within industrial automation systems.
- Switching applications in low to medium power electronic devices where reliable PNP transistor operation is essential.
- Complementary amplifier stages paired with NPN transistors in audio and power amplifier designs.
- Military and aerospace electronics demanding robust, temperature-tolerant transistor components for critical signal processing.
JANTXVE2N2907AUB-Transistor Brand Info
The JANTXVE2N2907AUB represents a high-reliability transistor manufactured under stringent military and aerospace quality standards. Its brand focus is on delivering components that meet exacting performance and durability criteria. Designed for engineers and sourcing specialists requiring dependable semiconductor devices, this product line is synonymous with enhanced ruggedness and consistent electrical characteristics, providing peace of mind for mission-critical system designs and industrial applications.
FAQ
What is the maximum collector current of the JANTXVE2N2907AUB transistor?
The maximum collector current for this transistor is rated at 800 mA, allowing it to handle moderate power loads safely. This makes it suitable for a variety of switching and amplification tasks within its specified limits.
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Can this transistor operate at high temperatures?
Yes, the device supports an operating temperature range from -65??C to +200??C, which makes it suitable for applications in harsh environments, including aerospace and military systems.
What is the significance of the DC current gain (hFE) range for this transistor?
The DC current gain range of 100 to 300 ensures stable amplification performance. This parameter is critical for ensuring predictable transistor behavior in signal processing and switching circuits.
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Is this transistor suitable for high-frequency applications?
With a transition frequency (fT) of 100 MHz, this transistor can be used in moderate-frequency applications, making it effective for a broad spectrum of industrial and control circuit designs.
What distinguishes this transistor from commercial-grade equivalents?
This transistor is manufactured to military-grade specifications, ensuring enhanced reliability, ruggedness, and long-term stability under extreme conditions, which typical commercial-grade devices may not guarantee.
