JANKCBL2N5004-Transistor-Die Overview
The JANKCBL2N5004 transistor die is a high-performance semiconductor component designed for efficient switching and amplification in industrial and electronic applications. Engineered with precise doping and fabrication techniques, this transistor die offers reliable operation with optimized current handling and voltage tolerance. Its compact die structure supports integration into custom packages, enabling tailored solutions for power management, signal processing, and high-frequency circuits. Sourcing specialists and design engineers benefit from its stable electrical characteristics and compatibility with standard assembly processes. For detailed manufacturing and distribution information, visit IC Manufacturer.
JANKCBL2N5004-Transistor-Die Key Features
- High Current Capability: Supports significant collector current, ensuring robust performance in power switching applications.
- Optimized Voltage Ratings: Designed to handle elevated collector-emitter voltages, increasing device reliability under stress conditions.
- Low Saturation Voltage: Enables efficient conduction with minimal power loss, enhancing overall energy efficiency of circuits.
- Precision Die Construction: Facilitates consistent electrical parameters, supporting high-yield manufacturing and application stability.
JANKCBL2N5004-Transistor-Die Technical Specifications
| Parameter | Specification |
|---|---|
| Collector-Emitter Voltage (VCEO) | 500 V |
| Collector Current (IC) | 4 A |
| Power Dissipation (Ptot) | 40 W |
| Gain Bandwidth Product (fT) | ?? 100 MHz |
| DC Current Gain (hFE) | 50 to 200 |
| Junction Temperature (Tj) | 150 ??C Max |
| Package Type | Die (bare silicon) |
| Base-Emitter Voltage (VBE) | 1.2 V (typical) |
JANKCBL2N5004-Transistor-Die Advantages vs Typical Alternatives
This transistor die offers superior voltage and current ratings compared to many alternatives, providing enhanced reliability in demanding power and switching environments. Its low saturation voltage reduces conduction losses, increasing circuit efficiency. The bare die format allows for flexible integration into custom packages, supporting specialized applications where size and thermal management are critical. These advantages make it a preferred choice for engineers seeking robust, high-performance transistor dies with consistent electrical characteristics.
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Typical Applications
- Power Amplification Circuits: Suitable for high-voltage amplification tasks in industrial control and communication systems where reliable switching is essential.
- Switching Regulators: Ideal for DC-DC converters and power management modules requiring efficient transistor switching.
- Motor Control Systems: Enables precise control of motor drives in automation and robotics with high current handling capabilities.
- Signal Processing: Supports analog and digital circuit designs requiring stable transistor performance at medium to high frequencies.
JANKCBL2N5004-Transistor-Die Brand Info
The JANKCBL2N5004 transistor die is produced by a leading semiconductor manufacturer known for its reliable and high-quality discrete components. This product represents the company??s commitment to delivering semiconductor dies that meet stringent industrial standards for performance and durability. Designed for integration into custom packages, the die is ideal for OEMs and electronics manufacturers seeking tailored transistor solutions with consistent manufacturing quality and support from a trusted brand in the semiconductor industry.
FAQ
What are the maximum voltage and current ratings for this transistor die?
The transistor die is rated for a maximum collector-emitter voltage of 500 volts and a collector current of up to 4 amperes. These ratings ensure robust operation in demanding power switching and amplification applications.
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Is this transistor die suitable for high-frequency applications?
Yes, with a gain bandwidth product of at least 100 MHz, this transistor die supports medium to high-frequency operation, making it suitable for signal processing and switching regulator circuits.
How does the bare die format benefit circuit designers?
The bare die format allows designers to integrate the transistor directly into custom packages or multi-chip modules, providing greater flexibility in thermal management, size constraints, and electrical interconnections compared to standard packaged transistors.
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What is the typical power dissipation rating for this device?
The device can safely dissipate up to 40 watts under specified conditions, allowing it to handle significant power loads with appropriate heat sinking or thermal management solutions.
How consistent are the electrical parameters across production batches?
The transistor die is manufactured with precision doping and process controls, resulting in consistent electrical characteristics such as DC current gain and base-emitter voltage. This consistency supports reliable circuit performance and high manufacturing yields.
