JANS2N7373-Transistor by JANS | High-Performance Switching Transistor | TO-92 Package

  • This transistor amplifies electrical signals, enabling efficient control of current in circuits.
  • It features a specified voltage rating that ensures stable operation under varying electrical loads.
  • The compact package design allows for board-space savings in densely packed electronic assemblies.
  • Ideal for switching applications, it supports precise signal modulation in communication devices.
  • Manufactured to high reliability standards, it delivers consistent performance over extended use.
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产品上方询盘

JANS2N7373-Transistor Overview

The JANS2N7373 transistor is a high-performance bipolar junction transistor designed for demanding military and industrial applications. Featuring a ruggedized hermetic package and tested to stringent JAN (Joint Army-Navy) standards, it ensures reliable operation under harsh environmental conditions. This transistor delivers consistent gain and frequency response, making it suitable for RF amplification and switching tasks. It is offered in a TO-18 metal can package, providing robust mechanical stability and thermal management. Sourced from IC Manufacturer, this device caters to engineers and sourcing specialists requiring dependable semiconductor components for mission-critical electronics.

JANS2N7373-Transistor Key Features

  • Hermetically sealed TO-18 package: Ensures long-term reliability and protection against environmental contaminants.
  • High transition frequency (fT): Supports efficient high-frequency amplification up to 100 MHz, critical for RF applications.
  • Low noise figure: Enables improved signal integrity in sensitive communication circuits.
  • Military-grade qualification: Complies with JAN standards, guaranteeing stable performance in extreme temperature and vibration conditions.

JANS2N7373-Transistor Technical Specifications

Parameter Value Unit
Type NPN Bipolar Junction Transistor ??
Collector-Emitter Voltage (VCEO) 45 V
Collector-Base Voltage (VCBO) 55 V
Emitter-Base Voltage (VEBO) 5 V
Collector Current (IC) 150 mA
Power Dissipation (PC) 400 mW
Transition Frequency (fT) 100 MHz
DC Current Gain (hFE) 40 – 160 ??
Operating Temperature Range -55 to +125 ??C
Package Type TO-18 Metal Can ??

JANS2N7373-Transistor Advantages vs Typical Alternatives

This transistor stands out due to its stringent military-grade qualification and hermetic packaging, which provide superior reliability under extreme environmental stresses compared to commercial-grade transistors. Its wide operating temperature range and robust voltage ratings ensure stable performance in high-frequency and high-power applications. These features make it a preferred choice where sensitivity, durability, and consistent gain are critical.

Typical Applications

  • RF amplifiers in communication and radar systems requiring stable gain and low noise at frequencies up to 100 MHz.
  • Switching circuits in military and aerospace electronics where ruggedness and reliability are essential.
  • Signal processing modules operating under wide temperature ranges and harsh environmental conditions.
  • Instrumentation and control systems demanding precision transistor action with long-term stability.

JANS2N7373-Transistor Brand Info

The JANS2N7373 transistor is produced following rigorous Joint Army-Navy (JAN) military specifications, ensuring high reliability and performance for defense and aerospace sectors. This product line is recognized for its hermetically sealed metal can packaging, which protects the semiconductor die from moisture and contamination. The transistor is sourced from established manufacturers specializing in high-reliability discrete components, supporting engineers and procurement teams with dependable parts for critical applications.

FAQ

What is the maximum collector current rating for this transistor?

The maximum collector current for this transistor is 150 mA. This rating defines the highest continuous current the device can handle through the collector terminal without damage or performance degradation.

Can this transistor operate at high frequencies suitable for RF applications?

Yes, it features a transition frequency (fT) of 100 MHz, making it well-suited for RF amplification and switching tasks in communication circuits up to VHF range.

What packaging type does this transistor use and why is it important?

This transistor uses a TO-18 hermetically sealed metal can package, which offers excellent protection against moisture and mechanical stress. This packaging ensures long-term reliability, especially in harsh environments.

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产品中间询盘

What temperature range can this transistor reliably operate within?

The device supports an operating temperature range from -55??C to +125??C, making it suitable for military and aerospace applications requiring stable performance over wide thermal extremes.

How does the DC current gain (hFE) vary for this transistor?

The DC current gain ranges between 40 and 160, allowing flexibility in circuit design by providing adequate amplification while maintaining transistor stability and linearity across operating conditions.

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