MS2N4931-Transistor by [Brand] – High-Speed Switching Transistor, TO-92 Package

MS2N4931-Transistor Overview

The MS2N4931-Transistor is a high-performance bipolar junction transistor (BJT) designed for robust switching and amplification applications. Featuring a medium power rating and optimized gain characteristics, this NPN transistor delivers reliable operation in industrial and consumer electronics circuits. Its standard TO-92 package ensures easy integration into through-hole assemblies, supporting efficient thermal dissipation and mechanical stability. Engineers and sourcing specialists will appreciate its consistent electrical parameters, making it well-suited for signal amplification, switching loads, and low-to-medium power applications. For detailed product sourcing and technical support, visit IC Manufacturer.

MS2N4931-Transistor Key Features

• Reliable Switching Performance: Ensures fast transition and stable operation in digital and analog circuits, enhancing system responsiveness.
• Moderate Power Handling: Supports collector currents up to 600mA, suitable for driving medium loads without compromising device integrity.
• High Current Gain (hFE): Provides efficient amplification with wide gain bandwidth, improving signal fidelity in amplification stages.
• Thermally Stable Package: The TO-92 encapsulation facilitates effective heat dissipation, contributing to long-term reliability in diverse environments.

MS2N4931-Transistor Technical Specifications

MS2N4931-Transistor Advantages vs Typical Alternatives

This transistor offers a balanced combination of moderate current capacity and high gain, outperforming many generic low-power BJTs with respect to switching speed and thermal stability. Its consistent hFE range ensures predictable amplification, essential for precision circuits. The compact TO-92 package supports easy prototyping and integration, while the device??s voltage and current ratings make it a versatile choice compared to standard small-signal transistors.

Typical Applications

• Signal amplification in audio and sensor circuits, where stable gain and low distortion are critical for performance.
• Switching loads in electronic control systems, such as relays and small motors, leveraging its 600mA collector current capacity.
• Driver stage in power management circuits, improving overall system efficiency through reliable transistor switching.
• General-purpose amplification and switching in consumer electronics, offering a cost-effective solution for multiple circuit designs.

MS2N4931-Transistor Brand Info

The MS2N4931-Transistor is produced by a reputable semiconductor manufacturer known for delivering quality discrete components tailored for industrial and commercial applications. This model is part of their extensive portfolio of bipolar transistors, engineered to meet stringent performance and reliability standards. The brand emphasizes robust manufacturing processes and thorough quality control, ensuring that each device performs consistently in demanding environments.

FAQ

What type of transistor is the MS2N4931?

The MS2N4931 is an NPN bipolar junction transistor (BJT), designed for general-purpose switching and amplification tasks. Its bipolar nature allows it to handle moderate currents and voltages efficiently in a variety of electronic circuits.

What are the maximum voltage and current ratings for this transistor?

This transistor supports a collector-emitter voltage (Vce) up to 40 volts and a maximum collector current (Ic) of 600 milliamps, making it suitable for medium power applications requiring robust switching capabilities.

In which package is the MS2N4931 supplied?

The device comes in a TO-92 package, a widely used through-hole format that provides ease of handling, good thermal dissipation, and compatibility with many standard circuit board layouts.

What is the typical current gain (hFE) range for this device?

The transistor typically exhibits a DC current gain (hFE) between 100 and 300, which ensures efficient signal amplification with stable performance across different operating conditions.

Can this transistor be used for high-frequency applications?

With a transition frequency (fT) around 100 MHz, this transistor is suitable for moderate-frequency amplification and switching, making it appropriate for many industrial and consumer electronics where fast response is required.