JANTXVE2N2222AUB-Transistor Overview
The JANTXVE2N2222AUB is a high-performance NPN bipolar junction transistor (BJT) designed for switching and amplification applications. Engineered for durability and consistent performance, this transistor supports collector currents up to 800 mA and collector-emitter voltages of 40 V, making it suitable for medium-power circuits. Its robust gain characteristics and fast switching speed enable efficient operation in signal processing and control systems. The device??s TO-18 package ensures reliable mounting and thermal management in industrial environments. For detailed specifications and sourcing, visit IC Manufacturer.
JANTXVE2N2222AUB-Transistor Key Features
- High collector current capacity: Supports up to 800 mA, enabling effective handling of medium-power switching tasks.
- Collector-emitter voltage rating of 40 V: Suitable for a wide range of low- to medium-voltage applications, ensuring operational flexibility.
- Fast switching performance: Enhances signal amplification and digital switching efficiency, reducing delays in circuit response.
- Reliable TO-18 metal can package: Offers excellent thermal conductivity and mechanical robustness for industrial-grade deployments.
JANTXVE2N2222AUB-Transistor Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Collector-Emitter Voltage (VCEO) | 40 | V |
| Collector Current (IC) | 800 | mA |
| Gain Bandwidth Product (fT) | 250 | MHz |
| DC Current Gain (hFE) | 100 to 300 | Typical |
| Collector-Base Voltage (VCBO) | 75 | V |
| Emitter-Base Voltage (VEBO) | 6 | V |
| Power Dissipation (Ptot) | 500 | mW |
| Transition Frequency | 250 | MHz |
| Package Type | TO-18 | Metal Can |
JANTXVE2N2222AUB-Transistor Advantages vs Typical Alternatives
This transistor offers superior collector current handling and voltage ratings compared to many standard NPN BJTs, providing enhanced reliability in industrial switching applications. Its fast switching speed and consistent gain make it preferable where signal integrity and response time are critical. The robust TO-18 packaging ensures better heat dissipation and mechanical durability, improving longevity over typical plastic-encapsulated alternatives.
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Typical Applications
- Switching circuits in industrial control systems requiring durable, medium-power transistor solutions with reliable gain and speed.
- Signal amplification in audio and RF stages where consistent gain and bandwidth are essential.
- Driver stages for relays, solenoids, or LEDs that demand medium current switching capability.
- General-purpose low-noise amplification in measurement and sensor interface circuits.
JANTXVE2N2222AUB-Transistor Brand Info
The JANTXVE2N2222AUB transistor is a military-grade variant within the family of 2N2222 BJTs, produced under strict quality controls for consistent performance in demanding environments. Manufactured by a trusted semiconductor vendor, this device meets rigorous industry standards for reliability and electrical characteristics, making it a preferred choice for engineers seeking robust, precision transistors. Its heritage in aerospace and industrial applications underscores its suitability for critical electronic designs.
FAQ
What is the maximum collector current for the JANTXVE2N2222AUB transistor?
The maximum collector current (IC) rating is 800 mA. This allows the device to handle moderate current loads typical in switching and amplification circuits without degradation.
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What package type does this transistor use, and why is it important?
This transistor is housed in a TO-18 metal can package, which offers superior thermal conductivity and mechanical strength compared to plastic packages. This packaging ensures better heat dissipation and durability in industrial and military applications.
Can this transistor be used for high-frequency applications?
Yes, with a transition frequency (fT) of approximately 250 MHz, this transistor supports moderate high-frequency applications such as RF amplification and fast switching in signal processing circuits.
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What voltage ratings should engineers consider when integrating this transistor?
The collector-emitter voltage rating is 40 V, and the collector-base voltage is 75 V. Design engineers must ensure operating voltages remain within these limits to maintain device reliability and prevent breakdown.
How does this transistor compare in gain characteristics?
The device offers a DC current gain (hFE) typically ranging from 100 to 300, providing stable amplification suitable for a wide range of analog and digital circuit applications.
