MS2N5672-Transistor Overview
The MS2N5672-Transistor is a high-performance NPN bipolar junction transistor designed for switching and amplification applications in industrial and electronic circuits. Offering reliable current gain and fast switching speeds, this transistor is well-suited for medium power applications, including audio amplifiers and signal processing. Its robust construction ensures durability under varying operating conditions, making it a dependable choice for engineers and sourcing specialists. Manufactured with precision, the MS2N5672-Transistor provides consistent electrical characteristics, enabling optimized circuit designs. For detailed technical support and sourcing, visit IC Manufacturer.
MS2N5672-Transistor Key Features
- High current gain (hFE): Enables efficient amplification and switching, improving overall circuit performance.
- Fast switching capabilities: Reduces signal delay and power loss, critical for high-frequency applications.
- Robust voltage handling: Supports collector-emitter voltages suitable for medium power designs, enhancing reliability.
- Stable thermal characteristics: Maintains performance across temperature variations, ensuring long-term device stability.
MS2N5672-Transistor Technical Specifications
| Parameter | Specification | Unit |
|---|---|---|
| Collector-Emitter Voltage (VCEO) | 60 | V |
| Collector-Base Voltage (VCBO) | 80 | V |
| Emitter-Base Voltage (VEBO) | 5 | V |
| Collector Current (IC) | 3 | A |
| Power Dissipation (Ptot) | 30 | W |
| Gain Bandwidth Product (fT) | 100 | MHz |
| DC Current Gain (hFE) | 60?C320 | (typical) |
| Transition Frequency (fT) | 100 | MHz |
MS2N5672-Transistor Advantages vs Typical Alternatives
This transistor offers superior switching speed and high current gain compared to many standard medium-power NPN transistors. Its ability to handle collector voltages up to 60 V and continuous collector currents of 3 A makes it ideal for demanding industrial applications. The wide gain range and stable thermal behavior provide enhanced reliability and efficiency, distinguishing it from typical alternatives that may fall short in power handling or frequency response.
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Typical Applications
- Audio amplifier stages where medium power handling and linear amplification are essential for sound fidelity and signal integrity.
- Switching circuits in industrial automation systems requiring fast and reliable transistor operation.
- Driver stages for relay and solenoid controls, benefiting from the transistor??s voltage and current capabilities.
- Signal processing circuits in consumer electronics, leveraging its gain and frequency characteristics for optimal performance.
MS2N5672-Transistor Brand Info
The MS2N5672-Transistor is a trusted component in the semiconductor industry, produced by a reputable manufacturer known for quality and consistency. This product line has a longstanding history in reliable medium-power transistor applications, offering engineers a dependable solution with well-documented performance. The brand??s commitment to rigorous testing and adherence to industry standards ensures that each transistor meets stringent quality requirements, making it a preferred choice for both design engineers and procurement professionals.
FAQ
What type of transistor is the MS2N5672?
The MS2N5672 is an NPN bipolar junction transistor (BJT) designed for medium power amplification and switching applications. Its configuration and electrical characteristics suit it for a variety of industrial and consumer electronic uses.
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What are the maximum voltage ratings for this transistor?
This device supports a maximum collector-emitter voltage (VCEO) of 60 V and a collector-base voltage (VCBO) of 80 V, making it suitable for circuits requiring moderate voltage handling capability.
Can the MS2N5672 handle high current loads?
Yes, it can handle continuous collector currents up to 3 A, which allows it to operate effectively in medium power applications such as audio amplifiers and relay drivers.
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What is the typical current gain range?
The transistor exhibits a DC current gain (hFE) typically between 60 and 320, enabling good amplification performance across various operating conditions.
Is the MS2N5672 suitable for high-frequency applications?
With a gain bandwidth product of approximately 100 MHz, this transistor is capable of handling moderately high-frequency signals, making it appropriate for many signal processing and switching tasks.
