2N6693-Transistor by ON Semiconductor | NPN Transistor | TO-39 Package

  • Designed for amplification and switching, it enables efficient signal control in various electronic circuits.
  • Features a stable gain characteristic, ensuring consistent performance under varying operating conditions.
  • Encased in a compact TO-39 package, it offers board-space savings for dense circuit layouts.
  • Commonly used in audio amplification, it delivers clear sound quality and reliable signal processing.
  • Manufactured with rigorous quality checks to maintain long-term operational reliability in critical applications.
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产品上方询盘

2N6693-Transistor Overview

The 2N6693 transistor is a high-power NPN silicon transistor designed for medium- to high-current switching and amplification applications. Featuring robust construction and reliable performance, this transistor is optimized for industrial electronic circuits where dependable power handling and efficient thermal management are critical. With a collector current rating suitable for demanding loads and a voltage rating supporting various power supply levels, it is well-suited for power amplifiers, motor controls, and switching regulators. Engineers and sourcing specialists seeking a rugged transistor for high-reliability designs will find this device advantageous. For more details, visit IC Manufacturer.

2N6693-Transistor Key Features

  • High collector current capability: Supports continuous collector currents up to 15 A, enabling robust handling of heavy loads without performance degradation.
  • Wide voltage rating: Collector-emitter voltage up to 80 V allows operation in a variety of power supply configurations and industrial environments.
  • Low saturation voltage: Enhances switching efficiency, reducing power loss and improving overall circuit energy efficiency.
  • Superior thermal stability: Designed with a TO-3 metal can package for effective heat dissipation, ensuring reliable operation under elevated temperatures.

2N6693-Transistor Technical Specifications

Parameter Value Unit
Collector-Emitter Voltage (VCEO) 80 V
Collector-Base Voltage (VCBO) 100 V
Emitter-Base Voltage (VEBO) 7 V
Collector Current (IC) – Continuous 15 A
Power Dissipation (Ptot) 150 W
DC Current Gain (hFE) 20 to 70 ??
Transition Frequency (fT) 4 MHz
Package Type TO-3 Metal Can ??

2N6693-Transistor Advantages vs Typical Alternatives

This transistor provides a compelling advantage over standard medium-power devices by combining a higher collector current rating with a robust package designed for superior thermal management. Compared to alternatives, it offers lower saturation voltage, which enhances switching efficiency and reduces heat dissipation requirements. Its broad voltage ratings and stable gain characteristics make it a reliable choice for industrial power amplification and switching, ensuring long-term operational reliability in demanding environments.

Typical Applications

  • Power amplifiers in audio and industrial signal processing where high current and voltage handling are essential for clear, distortion-free amplification.
  • Motor control circuits requiring efficient switching and high current capacity to drive inductive loads reliably.
  • Switching regulators and power supply circuits that benefit from low saturation voltage and effective thermal performance.
  • Industrial automation systems demanding robust and durable transistors for switching and control functions under harsh operating conditions.

2N6693-Transistor Brand Info

The 2N6693 transistor is manufactured by a leading semiconductor producer specializing in high-performance discrete components for industrial electronics. This product is part of a trusted family of power transistors designed to meet stringent quality and reliability standards. The device??s TO-3 package and technical specifications reflect the brand??s commitment to providing components that support demanding applications requiring durability and consistent electrical performance.

FAQ

What is the maximum collector current rating for this transistor?

The transistor supports a continuous collector current of up to 15 amperes, making it suitable for applications needing high current handling without compromising performance or reliability.

What package type is used for this transistor and why is it important?

This device is housed in a TO-3 metal can package, which offers excellent thermal conductivity and mechanical robustness, essential for dissipating heat efficiently in high-power applications.

Can this transistor be used in high-frequency applications?

With a transition frequency of approximately 4 MHz, this transistor is primarily intended for medium frequency switching and amplification rather than high-frequency RF applications.

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产品中间询盘

What voltage ratings does this transistor support?

The collector-emitter voltage is rated at 80 V, with collector-base voltage up to 100 V and emitter-base voltage at 7 V, providing flexibility for various power supply designs and industrial environments.

How does the transistor’s low saturation voltage benefit circuit design?

A lower saturation voltage reduces power losses during switching, which improves overall circuit efficiency, minimizes heat generation, and enhances the longevity of both the transistor and the surrounding components.

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