JANTXV2N5663-Transistor Overview
The JANTXV2N5663 transistor is a high-performance NPN bipolar junction transistor designed for general-purpose amplification and switching applications. Featuring a collector-emitter voltage rating suitable for robust industrial environments, this transistor ensures reliable operation over a wide temperature range. Its silicon planar epitaxial structure offers enhanced gain and low noise characteristics, making it ideal for precision signal processing tasks. Manufactured to meet stringent military standards, this device guarantees consistent performance in demanding conditions. Available through IC Manufacturer, it supports diverse electronic designs requiring stable linear amplification and efficient power management.
JANTXV2N5663-Transistor Key Features
- High breakdown voltage: Supports up to 60 V collector-emitter voltage, ensuring robustness in high-voltage circuits.
- Moderate current handling capability: Maximum collector current of 0.8 A enables effective power switching and amplification.
- Low noise figure: Ideal for signal amplification with minimal distortion, enhancing signal clarity.
- Wide operating temperature range: Maintains performance from -55??C to +125??C, suitable for harsh industrial environments.
- Complementary gain characteristics: Beta (hFE) ranging from 40 to 320 allows flexible biasing and gain configuration.
- TO-18 metal can package: Provides excellent thermal dissipation and mechanical stability for high-reliability applications.
- Military-grade testing and screening: Ensures consistent quality and long-term reliability in critical systems.
JANTXV2N5663-Transistor Technical Specifications
| Parameter | Value |
|---|---|
| Type | NPN Bipolar Junction Transistor |
| Collector-Emitter Voltage (Vceo) | 60 V |
| Collector-Base Voltage (Vcbo) | 75 V |
| Emitter-Base Voltage (Vebo) | 5 V |
| Collector Current (Ic) | 0.8 A (max) |
| Power Dissipation (Pc) | 1 W (max) |
| DC Current Gain (hFE) | 40 to 320 (at Ic=10 mA) |
| Transition Frequency (fT) | Minimum 100 MHz |
| Operating Temperature Range | -55??C to +125??C |
| Package | TO-18 Metal Can |
JANTXV2N5663-Transistor Advantages vs Typical Alternatives
This transistor offers superior voltage handling and a broad gain range compared to typical low-power transistors. Its military-grade screening enhances reliability under extreme conditions, making it a dependable choice for precision switching and amplification. The TO-18 package provides better thermal performance and mechanical robustness than standard plastic housings, ensuring long-term operational stability in industrial and aerospace environments.
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Typical Applications
- Signal amplification in communication systems requiring low noise and stable gain across wide temperature ranges.
- Switching circuits in industrial control systems where reliable operation at elevated voltages is critical.
- Driver stages for power transistors in linear and switching power supplies.
- Military and aerospace electronic systems demanding components qualified for harsh environmental conditions.
JANTXV2N5663-Transistor Brand Info
The JANTXV2N5663 transistor is a product engineered to meet stringent military and aerospace standards. It is manufactured under the stringent quality controls of the JANTX series, ensuring high reliability and consistent electrical performance. This device is part of a family of rugged transistors designed for critical applications where failure is not an option. The brand emphasizes durability, thermal stability, and electrical precision, catering to engineers requiring proven solutions for challenging electronic environments.
FAQ
What is the maximum collector current rating for this transistor?
The maximum collector current for this transistor is 0.8 A. This allows the device to handle moderate power levels suitable for switching and amplification in various industrial applications.
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Can this transistor operate reliably at high temperatures?
Yes, it supports an operating temperature range from -55??C to +125??C, making it suitable for use in environments with wide thermal variations, such as aerospace and military systems.
What package type does this transistor use, and why is it beneficial?
This transistor is housed in a TO-18 metal can package, which offers enhanced thermal dissipation and mechanical stability compared to plastic packages. This packaging is ideal for applications requiring long-term reliability under thermal stress.
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Is this transistor suitable for low-noise amplification applications?
Yes, the device features a low noise figure, making it well-suited for precision signal amplification where maintaining signal integrity is crucial.
How does the gain (hFE) vary for this transistor?
The DC current gain ranges from 40 to 320 at a collector current of 10 mA. This wide gain variation allows flexibility in circuit design for various amplification needs.
