CY7C1011CV33-12AC 1M x 8 SRAM Memory IC, 44-Pin PLCC Package

  • This device provides high-speed static RAM storage, enabling fast data access and improved system performance.
  • With a 12 ns access time, it supports rapid read/write cycles crucial for time-sensitive applications.
  • The compact 32-pin DIP package offers space-saving benefits suitable for designs with limited board area.
  • Ideal for embedded systems requiring quick memory retrieval to enhance processing efficiency and responsiveness.
  • Manufactured to meet stringent quality standards, ensuring reliable operation under various conditions.
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CY7C1011CV33-12AC Overview

The CY7C1011CV33-12AC is a high-performance 1M x 8 CMOS Static Random Access Memory (SRAM) device optimized for 3.3V operation. Featuring fast access times of 12 nanoseconds, this SRAM supports high-speed data storage and retrieval, making it ideal for demanding industrial and embedded system applications. The device offers low power consumption with CMOS technology and is packaged in a standard 32-pin plastic leaded chip carrier (PLCC) for easy integration. Designed for reliability and efficiency, this memory component suits engineers and sourcing specialists seeking robust semiconductor options. For further details, visit IC Manufacturer.

CY7C1011CV33-12AC Technical Specifications

ParameterSpecification
Memory Organization1,048,576 words ?? 8 bits
Operating Voltage3.3 V ?? 0.3 V
Access Time12 ns
Package Type32-pin PLCC
Data Retention Voltage2.0 V (minimum)
Operating Temperature Range0??C to +70??C (Commercial)
Power Supply Current (Operating)80 mA (typical)
Standby Current50 ??A (typical)

CY7C1011CV33-12AC Key Features

  • Fast 12 ns Random Access Time: Enables rapid data retrieval and storage, improving overall system throughput in high-speed applications.
  • Low-Voltage 3.3V Operation: Reduces power consumption and heat generation, which is critical for power-sensitive embedded designs.
  • High-Density 1M x 8 Memory Array: Offers ample storage capacity in a compact form factor, ideal for systems requiring significant on-chip memory.
  • CMOS Technology: Ensures low static power dissipation, enhancing device reliability and extending operational lifetime in industrial environments.
  • Standard 32-Pin PLCC Package: Facilitates easy integration into existing PCB layouts, simplifying system design and assembly.
  • Wide Operating Temperature Range: Maintains stable performance across commercial temperature zones, suitable for diverse applications.

CY7C1011CV33-12AC Advantages vs Typical Alternatives

This SRAM device excels with its combination of fast 12 ns access times and low-voltage 3.3V operation, surpassing many traditional 5V SRAM options in power efficiency. Its CMOS technology offers reduced standby current, enhancing reliability and energy savings in embedded systems. The compact 32-pin PLCC package supports straightforward integration, making it advantageous for engineers prioritizing speed, power, and compatibility in industrial semiconductor selections.

Typical Applications

  • High-speed cache memory for microprocessors and digital signal processors, where rapid access and low latency are essential for system performance.
  • Embedded systems requiring non-volatile fast memory with low power consumption to maintain efficient operation and data retention.
  • Networking equipment such as routers and switches that demand reliable, fast SRAM for buffering and packet processing tasks.
  • Industrial automation and control systems, leveraging stable operation across temperature ranges and reduced power draw to ensure long-term reliability.

CY7C1011CV33-12AC Brand Info

The CY7C1011CV33-12AC is a product from a leading semiconductor manufacturer specializing in high-quality CMOS static RAM solutions. This component embodies the brand??s commitment to delivering reliable, fast, and power-efficient memory devices tailored for industrial and embedded applications. The product??s design reflects rigorous standards for performance and integration, supporting engineers in developing advanced electronic systems with dependable memory subsystems.

FAQ

What is the typical power consumption of this SRAM during operation?

The device typically consumes around 80 mA during active operation at 3.3V supply voltage. This low current draw is achieved through CMOS technology, which helps minimize power dissipation in high-speed memory

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