CY7C1339A-66AC 64K x 8 SRAM Memory IC – High-Speed CMOS – 28-Pin DIP Package

  • This device performs high-speed static RAM functions, enabling efficient temporary data storage for digital systems.
  • Featuring a fast access time, it ensures quick data retrieval, which is critical for performance-sensitive applications.
  • The compact CBZ package reduces board space, facilitating streamlined designs in constrained hardware environments.
  • Ideal for buffering data in embedded systems, it supports smooth operation by minimizing latency in memory access.
  • Manufactured under stringent quality controls, it offers dependable operation suitable for long-term use in various conditions.
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CY7C1339A-66AC Overview

The CY7C1339A-66AC is a high-performance 32K x 8-bit CMOS Static RAM designed for fast and reliable data storage in industrial and computing applications. Operating at a 66 MHz cycle time, this device offers low power consumption combined with high-speed access, making it suitable for embedded systems requiring efficient memory solutions. The SRAM supports asynchronous operation, allowing flexible interfacing with various microprocessors and digital systems. Its TTL-compatible inputs and outputs ensure seamless integration. Designed for robustness and stability, the device is ideal for engineers and sourcing specialists looking for dependable SRAM memory components. For more details, visit IC Manufacturer.

CY7C1339A-66AC Technical Specifications

Parameter Specification
Memory Size 32K x 8 bits (32,768 words x 8 bits)
Access Time 15 ns (typical), 66 MHz maximum clock frequency
Operating Voltage 5 V ??10%
Standby Current Typically 20 mA at 5 V
Operating Temperature Range 0??C to 70??C (Commercial)
Package Type 28-pin Plastic DIP or SOJ
Data Retention Voltage 2 V (typical)
Input/Output Compatibility TTL Compatible

CY7C1339A-66AC Key Features

  • High-speed asynchronous SRAM: Enables fast data access with a 15 ns cycle time, improving system responsiveness and throughput.
  • TTL compatible I/O: Simplifies interface design with standard digital logic families, ensuring easy integration in various electronic circuits.
  • Low power consumption: Consumes minimal current during standby and operation, enhancing energy efficiency in embedded and portable applications.
  • Robust operating voltage range: Supports stable performance over 5 V ??10%, ensuring reliability across fluctuating power conditions.

CY7C1339A-66AC Advantages vs Typical Alternatives

This device offers superior speed and low power consumption compared to typical SRAM alternatives, delivering faster access times at 66 MHz operation. Its TTL-compatible I/O and stable voltage range provide enhanced integration flexibility. Additionally, the low standby current contributes to energy-efficient designs, making it a reliable choice for engineers prioritizing power management and performance in memory solutions.

Typical Applications

  • Embedded system memory: Ideal for buffering and temporary data storage in microcontroller and DSP-based designs where fast, reliable SRAM is required.
  • Cache memory: Serves as high-speed cache for processors to improve overall system performance in computing environments.
  • Communications equipment: Used in data buffering and packet storage for network routers and switches.
  • Industrial automation: Supports control systems needing stable and quick memory access under varied operational conditions.

CY7C1339A-66AC Brand Info

The CY7C1339A-66AC is part of a well-established CMOS SRAM product line known for high reliability and consistent performance in industrial and commercial applications. Manufactured with advanced CMOS technology, this device meets rigorous quality and stability standards, offering engineers a trusted memory solution for diverse electronic designs. Its proven architecture and packaging options make it a preferred choice for sourcing specialists targeting durable and efficient SRAM components.

FAQ

What is the operating voltage range for this SRAM?

The device operates reliably at 5 V with a tolerance of ??10%, ensuring it functions correctly within a voltage range of approximately 4.5 V to 5.5 V. This range supports stable operation in most standard digital system environments.

How fast is the access time of this memory?

This SRAM offers a typical access time of 15 nanoseconds, supporting data rates up to 66 MHz. This speed allows for quick read/write cycles, making it suitable for high-performance applications requiring fast data access.

Can this SRAM be used in low-power applications?

Yes, the device features low standby

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