S29GL128S10FHIV20 128Mb SPI Flash Memory IC – SOIC-8 Package

  • Provides reliable non-volatile memory storage, enabling data retention without power supply interruptions.
  • Features a high-speed interface that enhances data read and write efficiency for faster system performance.
  • Encased in a compact package, this design supports board-space savings and simplifies integration into tight layouts.
  • Ideal for embedded systems requiring stable firmware storage, ensuring smooth operation in industrial environments.
  • Built to meet strict quality standards, ensuring consistent endurance and long-term data integrity under normal usage.
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S29GL128S10FHIV20 Overview

The S29GL128S10FHIV20 is a high-performance 128Mb (16MB) NOR flash memory device optimized for advanced embedded systems requiring reliable non-volatile storage. Designed with a 90 nm process technology, it delivers fast access times and supports multiple operations such as program, erase, and read with enhanced endurance. The device features a 16-bit data bus interface and operates within a 3.0V to 3.6V power supply range, making it suitable for industrial applications demanding speed, data integrity, and low power consumption. For detailed technical support and availability, consult IC Manufacturer.

S29GL128S10FHIV20 Technical Specifications

ParameterSpecification
Memory Density128 Megabits (16 MBytes)
Interface16-bit data bus
Operating Voltage3.0 V to 3.6 V
Access Time90 ns
Process Technology90 nm CMOS
Sector Architecture64 sectors (64KB each)
Endurance100,000 program/erase cycles per sector
Data Retention20 years minimum
Operating Temperature Range-40??C to +85??C
Package Type48-pin TSOP

S29GL128S10FHIV20 Key Features

  • Advanced 90 nm CMOS process: Enables high-density memory integration with low power consumption, ideal for embedded industrial applications.
  • Fast 90 ns access time: Provides quick data retrieval, reducing system latency and improving overall performance.
  • Sector architecture with 64 sectors: Allows flexible and efficient program/erase operations, optimizing memory management and longevity.
  • High endurance rating: Supports 100,000 program/erase cycles per sector, ensuring durability for frequent update environments.
  • Wide operating temperature range: Suitable for harsh industrial conditions, guaranteeing stable performance from -40??C to +85??C.
  • 16-bit data bus interface: Facilitates high-speed parallel data transfers, enhancing throughput in embedded systems.
  • Long data retention: Maintains data integrity for a minimum of 20 years, critical for long-term storage applications.

S29GL128S10FHIV20 Advantages vs Typical Alternatives

This NOR flash device offers superior endurance and faster access times compared to many traditional serial flash memories. Its parallel 16-bit interface delivers higher throughput and lower latency, essential for real-time industrial control systems. Additionally, the extended temperature range and robust sector architecture enhance reliability and flexibility, making it a preferred choice over alternatives that may lack these attributes or have lower durability and slower programming speeds.

Typical Applications

  • Embedded systems requiring fast, reliable non-volatile storage such as industrial automation controllers where quick code execution and frequent updates are critical.
  • Networking equipment firmware storage where high endurance and rapid read access support system uptime and reliability.
  • Consumer electronics that demand large memory capacity with long data retention for firmware and application storage.
  • Automotive systems needing robust memory solutions capable of operating across wide temperature ranges and harsh environments.

S29GL128S10FHIV20 Brand Info

The S29GL128S10FHIV20 is part of a well-established product family known for high-quality NOR flash memory solutions. Manufactured using advanced semiconductor processes, this device exemplifies the brand??s commitment to delivering reliable, high-performance memory components tailored for demanding industrial and embedded applications. It benefits from rigorous quality control and industry-standard packaging, enabling seamless integration into diverse hardware platforms.

FAQ

What is the typical power consumption of this memory device during read and program operations?

While exact power consumption values vary by operating conditions, the device??s 90 nm CMOS technology ensures low power usage. Generally, read operations consume minimal current to support efficient data access, and program/erase cycles are optimized to balance speed with energy efficiency, suitable for power-sensitive embedded systems.

How does the sector architecture impact memory management and system updates?
Application

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