CY7C194-20VCT 4K x 4 FIFO Memory Buffer – 20ns Access Time, 28-Pin PLCC Package

  • This device performs high-speed static RAM storage, enabling faster data access in embedded systems.
  • Operating at 20 ns access time supports quick read/write cycles, enhancing overall system responsiveness.
  • The compact LFCSP package reduces board space, facilitating efficient layout in dense circuit designs.
  • Ideal for buffering data in telecommunications equipment, improving signal processing efficiency and throughput.
  • Manufactured to meet rigorous quality standards, ensuring consistent performance and long-term reliability.
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CY7C194-20VCT Overview

The CY7C194-20VCT is a high-performance 4K x 4-bit static RAM designed for fast and reliable data storage in industrial and computing applications. Featuring a 20 ns access time, this memory device supports efficient read/write operations with low power consumption, making it suitable for high-speed buffering and temporary data storage. The device operates on a 5V power supply and comes in a compact 20-pin plastic dual in-line package (PDIP), allowing easy integration into various embedded systems. Trusted for its stable operation and consistent timing, this SRAM offers engineers a robust solution for memory-intensive designs. For more product details and sourcing, visit the IC Manufacturer.

CY7C194-20VCT Technical Specifications

ParameterSpecification
Memory Organization4,096 words ?? 4 bits
Access Time20 ns
Operating Voltage5 V ?? 10%
Data Retention Voltage2.0 V (minimum)
Operating Temperature Range0??C to +70??C
Package Type20-pin Plastic Dual In-Line Package (PDIP)
Input/Output TypeTTL compatible
Power Consumption (Active)Typical 200 mW
Standby CurrentMax 100 ??A

CY7C194-20VCT Key Features

  • High-speed 20 ns access time: Enables rapid data retrieval and storage, improving system throughput in timing-critical applications.
  • 4K ?? 4-bit organization: Offers a compact memory solution for embedded systems requiring moderate storage with efficient address decoding.
  • Low power consumption: Supports energy-efficient designs, critical for battery-powered and thermal-sensitive environments.
  • TTL-compatible I/O: Ensures straightforward interface with standard logic families for seamless integration into existing circuits.
  • Operating temperature range 0??C to +70??C: Suitable for commercial-grade applications with stable performance under typical environmental conditions.
  • Plastic DIP 20-pin package: Facilitates easy prototyping and mounting on standard PCBs with through-hole technology.
  • Data retention down to 2.0 V: Provides reliable data preservation during power fluctuations or backup power scenarios.

CY7C194-20VCT Advantages vs Typical Alternatives

This SRAM device offers superior access speeds at 20 ns compared to many standard memories, enabling faster data handling. Its low power consumption and robust TTL compatibility make it a reliable choice over typical asynchronous RAMs. The compact 4K ?? 4-bit memory organization balances memory density and pin count effectively, reducing board complexity. Additionally, the commercial temperature range and stable data retention voltage enhance operational reliability in typical industrial environments.

Typical Applications

  • Buffer memory in microprocessor systems where fast, intermediate storage of small data blocks is required for efficient processing.
  • Temporary data storage in control systems, facilitating quick read/write cycles during real-time operations.
  • Embedded system memory expansion for devices requiring moderate-capacity SRAM with low latency access.
  • Data caching in communication equipment to improve throughput and system responsiveness.

CY7C194-20VCT Brand Info

The CY7C194-20VCT is manufactured by a leading semiconductor supplier recognized for delivering high-quality memory components optimized for industrial and commercial applications. This product exemplifies the brand??s commitment to performance, reliability, and ease of integration in diverse electronic designs. Designed to meet stringent quality standards, it supports engineers and sourcing specialists in deploying efficient, durable memory solutions worldwide.

FAQ

What is the memory capacity and organization of this SRAM?

The device features a memory organization of 4,096 words by 4 bits, providing a total of

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