CY7C197N-45PXC 1M x 8 CMOS SRAM Memory IC ?C 44-Pin PLCC Package

  • This device serves as a high-speed static RAM, enabling fast data access and efficient memory storage for embedded systems.
  • With a 45 ns access time, it ensures quick read/write cycles, reducing wait states in time-sensitive applications.
  • The 44-pin plastic DIP package offers a compact footprint, simplifying integration in space-constrained circuit boards.
  • Ideal for use in buffering and caching within communication equipment, improving data throughput and system responsiveness.
  • Manufactured to meet strict quality standards, it provides reliable operation under varied environmental conditions.
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CY7C197N-45PXC Overview

The CY7C197N-45PXC is a high-speed 4K x 8-bit synchronous pipeline burst Static RAM (PSRAM) designed for applications requiring fast, efficient, and reliable memory solutions. Operating at 45 ns access times, it supports seamless synchronous burst operations, enabling rapid data throughput and low latency. Ideal for industrial and embedded systems, this memory device features a 3.3V power supply and a pipeline architecture that optimizes performance in high-speed computing environments. Engineers and sourcing specialists will appreciate its robust design, ensuring consistent operation across various conditions. For detailed technical data, visit the IC Manufacturer.

CY7C197N-45PXC Technical Specifications

Parameter Specification
Memory Size 4K x 8 bits
Access Time 45 ns
Power Supply Voltage (Vcc) 3.3 V ?? 0.3 V
Interface Type Synchronous Pipeline Burst SRAM
Burst Length 4, 8, or full-page selectable
Operating Temperature Range 0??C to +70??C
Package Type 44-Pin Plastic Shrink Small Outline Package (P-SOP)
Data I/O Width 8-bit

CY7C197N-45PXC Key Features

  • Synchronous pipeline burst operation: Enables high-speed data transfers by overlapping internal operations, significantly reducing wait states and improving system throughput.
  • Selectable burst length: Offers flexible burst modes (4, 8, or full page), allowing efficient data handling tailored to specific application demands.
  • Low power consumption: Operates at a 3.3V supply voltage, minimizing power usage while maintaining fast access speeds, ideal for power-sensitive industrial electronics.
  • Robust packaging: Housed in a 44-pin P-SOP package, ensuring easy board integration and reliable mechanical stability in demanding environments.

CY7C197N-45PXC Advantages vs Typical Alternatives

This device offers faster access times and a synchronous pipeline burst interface that outperforms traditional asynchronous SRAMs in speed and efficiency. Its selectable burst length enhances data throughput customization, while the low 3.3V power supply reduces energy consumption without compromising performance. The robust packaging and industry-standard pinout improve integration reliability compared to alternatives, making it a preferred choice for high-speed, low-power memory applications.

Typical Applications

  • High-speed cache memory for embedded systems, where rapid data access and low latency are critical for processor performance and system efficiency.
  • Video frame buffering, providing fast and reliable temporary storage to support real-time image processing and display systems.
  • Telecommunications equipment requiring fast, synchronous data handling for buffering and temporary data storage in network switching.
  • Industrial control systems, offering dependable memory performance in environments with strict timing and reliability requirements.

CY7C197N-45PXC Brand Info

The CY7C197N-45PXC is a product from a leading semiconductor manufacturer known for high-quality memory solutions tailored to industrial and embedded applications. This synchronous pipeline burst SRAM is part of a broader portfolio designed to meet stringent performance and reliability standards. The brand emphasizes technical innovation, robust product design, and consistent manufacturing quality, providing engineers and supply chain professionals with trusted components optimized for demanding electronic systems.

FAQ

What is the primary memory organization of this SRAM?

The memory is organized as 4K words by 8 bits, meaning it stores 4,096 addresses with 8 bits of data per address. This structure is suitable for applications requiring moderate memory depth with an 8-bit data width.

How does the synchronous pipeline burst feature benefit system performance?

The synchronous pipeline burst operation allows new data to be accessed every clock cycle after an initial latency, overlapping operations internally. This reduces wait states and increases throughput, making data transfers more efficient compared to asynchronous SRAMs.

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