CY62137CVSL-70BAI Overview
The CY62137CVSL-70BAI is a 1-Megabit (128K x 8) CMOS Static RAM designed for high-performance applications requiring fast access and low power consumption. Featuring a 70 ns access time, this memory device ensures rapid data retrieval suited for demanding industrial and embedded systems. Housed in a compact 32-pin SOJ package, it offers a stable and reliable memory solution optimized for both speed and power efficiency. Its wide voltage operation range and advanced CMOS technology make it ideal for applications where endurance and minimal heat generation are critical. For detailed technical support and supply, visit IC Manufacturer.
CY62137CVSL-70BAI Technical Specifications
| Parameter | Specification |
|---|---|
| Memory Organization | 128K x 8 bits |
| Access Time | 70 ns |
| Technology | CMOS |
| Operating Voltage | 5 V ?? 10% |
| Package Type | 32-pin SOJ |
| Power Supply Current (Active) | 22 mA (Max) |
| Power Supply Current (Standby) | 100 ??A (Max) |
| Temperature Range | 0??C to +70??C (Commercial) |
| Data Retention Voltage | 2.0 V (Min) |
| Input/Output Type | TTL Compatible |
CY62137CVSL-70BAI Key Features
- Fast 70 ns Access Time: Enables rapid read and write cycles, improving system performance in time-sensitive applications.
- Low Power CMOS Technology: Minimizes power consumption during active and standby modes, extending battery life in portable and embedded systems.
- Wide Operating Voltage Range: Supports 5 V ?? 10%, ensuring reliable operation across standard industrial power supplies.
- Standard 32-Pin SOJ Package: Facilitates easy PCB integration and compatibility with existing system footprints.
- Static RAM Architecture: Eliminates the need for refresh cycles, simplifying system design and reducing latency.
CY62137CVSL-70BAI Advantages vs Typical Alternatives
This SRAM device offers a superior combination of fast access speed and low power consumption compared to typical dynamic RAM alternatives. Its static architecture removes the complexity of refresh requirements, thereby increasing reliability and reducing system overhead. The CMOS process further enhances energy efficiency, making it ideal for industrial and embedded applications where power and performance are critical factors.
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Typical Applications
- High-speed buffering and cache memory in embedded microprocessor systems where rapid data access is essential to system responsiveness.
- Data storage in industrial control systems requiring reliable and stable non-volatile memory under standard operating conditions.
- Temporary data storage in telecommunications equipment to facilitate quick data handling and minimize latency.
- General-purpose memory for automotive electronics where durability and consistent performance are necessary under varying environmental conditions.
CY62137CVSL-70BAI Brand Info
The CY62137CVSL-70BAI is a product of a leading semiconductor manufacturer renowned for producing high-quality, reliable memory components. This SRAM module exemplifies the brand??s commitment to delivering advanced CMOS memory solutions that meet stringent industrial standards. Designed to support demanding applications, it reflects the manufacturer??s expertise in balancing speed, power efficiency, and integration flexibility to optimize system performance.
FAQ
What is the access time of the CY62137CVSL-70BAI?
The device offers a 70 ns access time, enabling fast read and write operations suitable for applications requiring high-speed memory access. This access speed ensures minimal latency when interfacing with microprocessors or embedded controllers.
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What power supply voltage does this SRAM require?
The SRAM operates within a 5 V ?? 10% power supply range, aligning with standard industrial voltage specifications. This range ensures stable performance across typical system power conditions.
How does the static RAM architecture benefit system design?
Static RAM eliminates the need for periodic refresh cycles required by dynamic RAM, simplifying memory controller design and reducing system complexity. This feature results in faster access times and more predictable memory behavior.