CY27C010-55ZC 1Mbit Flash Memory IC – 32-Pin DIP Package

  • This device stores non-volatile data, enabling persistent memory retention for embedded systems and firmware.
  • Access speed supports efficient read/write cycles, reducing latency in critical data retrieval operations.
  • The compact DIP package minimizes board space, facilitating integration into constrained hardware designs.
  • Ideal for firmware storage in consumer electronics, improving boot times and system responsiveness.
  • Manufactured with quality controls ensuring consistent performance and long-term data integrity under standard conditions.
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CY27C010-55ZC Overview

The CY27C010-55ZC is a 1 Megabit (128K x 8) CMOS Erasable Programmable Read-Only Memory (EPROM) device engineered for high-performance memory storage applications. Featuring a 55 nanosecond access time, this non-volatile memory provides fast data retrieval essential for embedded systems and industrial electronics. Its 28-pin dual in-line package supports industry-standard pin configuration, ensuring straightforward integration. The device??s CMOS technology offers low power consumption and reliable operation over a wide temperature range. Designed for versatility and durability, the CY27C010-55ZC is ideal for engineers and sourcing specialists seeking dependable EPROM solutions from a trusted IC Manufacturer.

CY27C010-55ZC Technical Specifications

ParameterSpecification
Memory Organization128K x 8 bits (1 Megabit)
Access Time55 ns
TechnologyCMOS EPROM
Package Type28-pin DIP (Dual In-line Package)
Operating Voltage (Vcc)5V ??10%
Standby Current (Icc1)50 ??A (typical)
Operating Current (Icc)35 mA (max)
Data Retention10 years (typical)
Endurance1000 Program/Erase cycles

CY27C010-55ZC Key Features

  • High-speed 55 ns access time: Enables rapid data retrieval critical for time-sensitive embedded systems.
  • 1 Megabit density: Provides ample storage capacity for firmware and program code, reducing the need for multiple memory devices.
  • CMOS low power consumption: Minimizes power draw during operation and standby, enhancing overall system efficiency and thermal management.
  • Standard 28-pin DIP package: Ensures compatibility with existing hardware designs, simplifying system integration and prototyping.
  • Reliable data retention: Maintains stored information for up to 10 years, ideal for long-term embedded applications.
  • Robust endurance: Supports up to 1000 program/erase cycles, allowing for repeated updates during development and maintenance.

CY27C010-55ZC Advantages vs Typical Alternatives

This EPROM device offers faster access times and lower power consumption compared to many traditional bipolar PROMs, improving system responsiveness and energy efficiency. Its CMOS technology enhances reliability and reduces heat generation, while the industry-standard package facilitates easy replacement or upgrade. These factors combine to deliver a robust, cost-effective memory solution with proven endurance and stable data retention.

Typical Applications

  • Embedded system firmware storage requiring stable, non-volatile memory with fast access times for real-time control.
  • Industrial automation controllers where reliable program storage and low power consumption are critical.
  • Legacy computing systems and hardware requiring standard 28-pin EPROM solutions for code storage and debugging.
  • Consumer electronics development platforms that benefit from reprogrammable memory for iterative software updates.

CY27C010-55ZC Brand Info

The CY27C010-55ZC is part of a well-established line of EPROM products recognized for their reliability and performance in industrial and commercial applications. This device embodies the brand??s commitment to providing memory solutions that meet stringent quality standards. Engineered using CMOS technology, it reflects decades of expertise in semiconductor design and manufacturing, offering engineers a trusted component for critical memory storage needs.

FAQ

What is the access time of this EPROM device?

The access time is 55 nanoseconds, which means the device can retrieve stored data within this time frame after a read command. This fast access supports high-speed applications requiring quick memory response.

How much memory capacity does this device provide?

Application

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