CY7C1021CV33-12BAI Overview
The CY7C1021CV33-12BAI is a 1M-bit (128K x 8) static random-access memory (SRAM) device designed for high-speed data storage and retrieval in industrial and embedded systems. Operating at a 3.3V power supply, it supports a fast access time of 12 nanoseconds, making it suitable for applications requiring rapid memory access and low latency. This CMOS SRAM offers low power consumption and is packaged in a 44-pin plastic TSOP type I form factor, ensuring easy integration into space-constrained designs. For engineers and sourcing specialists seeking reliable and efficient SRAM solutions, the CY7C1021CV33-12BAI delivers optimal performance in a robust package. Visit IC Manufacturer for detailed technical support and purchasing options.
CY7C1021CV33-12BAI Technical Specifications
| Parameter | Specification |
|---|---|
| Memory Organization | 128K x 8 bits (1M-bit) |
| Access Time | 12 ns |
| Power Supply Voltage (Vcc) | 3.3 V ?? 0.3 V |
| Input High Voltage (VIH) | 2.0 V (minimum) |
| Input Low Voltage (VIL) | 0.8 V (maximum) |
| Operating Temperature Range | 0??C to +70??C |
| Package Type | 44-pin Plastic TSOP Type I |
| Standby Current (ISB1) | 10 ??A (typical) |
| Operating Current (ICC) | 85 mA (maximum) |
| Data Retention Voltage | 2.0 V (minimum) |
CY7C1021CV33-12BAI Key Features
- Fast 12 ns access time: Enables rapid data read and write operations, reducing system latency and improving processing speed.
- Low-voltage 3.3V operation: Optimizes power efficiency, which extends battery life and reduces heat generation in compact embedded systems.
- High integration density: Provides 1M-bit memory capacity in a single chip, minimizing board space and simplifying system design.
- 44-pin TSOP Type I package: Offers a slim, space-saving footprint suitable for applications with stringent PCB real estate requirements.
- Low standby current: Supports power-saving modes for extended device longevity in low-power environments.
- Robust CMOS technology: Ensures high noise immunity and stable performance under industrial operating conditions.
- Wide operating temperature range: Maintains reliable operation in standard commercial temperature conditions, suitable for many industrial applications.
CY7C1021CV33-12BAI Advantages vs Typical Alternatives
This SRAM device offers significant advantages over typical alternatives by combining fast 12 ns access times with low 3.3V operating voltage, resulting in enhanced speed and reduced power consumption. Its high integration density in a compact 44-pin TSOP package simplifies circuit design and reduces board space. Furthermore, its low standby current and robust CMOS technology improve overall system reliability and efficiency, making it an excellent choice for demanding industrial and embedded memory applications.
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Typical Applications
- High-speed buffering and caching in telecommunications equipment, where rapid memory access and low power consumption are critical for data throughput.
- Embedded system memory storage for microcontroller-based applications requiring fast and reliable SRAM.
- Data acquisition systems that demand stable and high-speed temporary storage in industrial automation and control.
- Networking devices such as routers and switches that utilize SRAM for packet buffering and quick data retrieval.
CY7C1021CV33-12BAI Brand Info
The CY7C1021CV33-12BAI is part of a comprehensive portfolio of high-performance SRAM products designed to meet stringent industrial and commercial