CY62146CV30LL-55BAI Overview
The CY62146CV30LL-55BAI is a 16Mbit (2M x 8) low-voltage static random-access memory (SRAM) designed for high-performance industrial and computing applications. Operating at a 3.0V power supply, it delivers fast access times of 55ns, making it suitable for systems requiring quick data retrieval and storage. Featuring a low-power CMOS process, this device ensures reduced power consumption without compromising speed or reliability. The 54-pin TSOP II package optimizes board space, enabling efficient system integration. Engineers and sourcing specialists will find this SRAM suitable for embedded system memory expansion or cache applications where high density and stable operation are critical. For more detailed information, visit IC Manufacturer.
CY62146CV30LL-55BAI Technical Specifications
| Parameter | Specification |
|---|---|
| Memory Density | 16Mbit (2M x 8) |
| Access Time | 55ns |
| Supply Voltage (Vcc) | 3.0V ??10% |
| Package Type | 54-pin TSOP II |
| Operating Temperature Range | 0??C to +70??C |
| Data Bus Width | 8 bits |
| Standby Current | Typical low standby current (??A range) |
| Interface | Static RAM asynchronous |
CY62146CV30LL-55BAI Key Features
- High-speed 55ns access time: Enables rapid data access critical for high-performance computing and real-time processing.
- Low-voltage 3.0V operation: Reduces power consumption, supporting energy-efficient system designs.
- 16Mbit density in compact TSOP II package: Saves board space while providing substantial memory capacity for embedded applications.
- Wide operating temperature range: Ensures reliable performance in standard industrial environments.
- Asynchronous static RAM interface: Simplifies system design by eliminating the need for refresh cycles.
CY62146CV30LL-55BAI Advantages vs Typical Alternatives
This SRAM offers a balanced combination of fast access speed and low power consumption at a 3.0V supply, outperforming comparable devices that often require higher voltages or exhibit slower speeds. Its compact 54-pin TSOP II packaging supports high-density memory integration without increasing PCB footprint. This device??s stable operation within a broad temperature range also enhances reliability compared to typical volatile memory solutions, making it an excellent choice for embedded and industrial applications.
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Typical Applications
- Embedded system memory expansion: Provides fast, reliable SRAM to expand volatile memory for microcontrollers and digital signal processors.
- Cache memory for high-speed processors: Supports temporary data storage to improve CPU efficiency and reduce wait states.
- Networking and telecommunications equipment: Enables quick data buffering and packet processing in communication systems.
- Industrial control systems: Ensures stable data storage in environments requiring consistent performance under varying temperatures.
CY62146CV30LL-55BAI Brand Info
The CY62146CV30LL-55BAI is part of a product family known for robust, high-speed SRAM solutions designed to meet demanding industrial and computing needs. Manufactured with proven CMOS technology, this SRAM device combines low power consumption with high reliability. Its adherence to strict quality standards ensures consistent performance across applications, reinforcing the brand??s commitment to delivering dependable memory components for system designers and engineers worldwide.
FAQ
What is the operating voltage range for the CY62146CV30LL-55BAI?
The device operates at a nominal voltage of 3.0V with a tolerance of ??10%, typically ranging between 2.7V and 3.3V. This low-voltage operation helps reduce power consumption while maintaining high-speed performance.
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What package type does this SRAM use, and why is it beneficial?
This SRAM uses a 54-pin TSOP II package, which offers a




