CY7C1021CV33-10ZI 1M x 8 CMOS SRAM Memory IC ?C 44-Pin PLCC Package

CY7C1021CV33-10ZI Overview

The CY7C1021CV33-10ZI is a high-performance 1Mbit (128K x 8) SRAM device optimized for fast access and low power consumption in industrial and embedded applications. Operating at 3.3 V with a 10 ns access time, this static RAM supports asynchronous read and write operations, enabling efficient data handling without complex timing requirements. Its compact 32-pin SOJ package ensures easy integration into space-constrained designs. The device is ideal for buffering, caching, and temporary data storage in systems requiring reliable high-speed memory. For more detailed product information, visit IC Manufacturer.

CY7C1021CV33-10ZI Technical Specifications

CY7C1021CV33-10ZI Key Features

• Fast 10 ns access time: Enables rapid data retrieval and storage, improving system performance in time-critical applications.
• Low-voltage 3.3 V operation: Reduces power consumption and heat generation, contributing to energy-efficient designs.
• Asynchronous interface: Simplifies timing control, allowing flexible integration with various microprocessors and controllers.
• Low standby current: Minimizes power draw during idle periods, extending battery life in portable systems.
• Compact 32-pin SOJ packaging: Facilitates high-density board layouts and reliable soldering for industrial environments.
• Wide operating temperature range: Ensures stable memory performance across typical commercial temperature conditions.

CY7C1021CV33-10ZI Advantages vs Typical Alternatives

This memory device offers a superior combination of fast access speed and low power consumption compared to standard SRAMs. Its low-voltage 3.3 V operation enhances energy efficiency without compromising performance. The asynchronous interface reduces design complexity and improves compatibility with a wide range of controllers. Additionally, the small form factor and low standby current provide advantages in space- and power-sensitive industrial applications, making it a reliable alternative to typical static RAM solutions.

Typical Applications

• Embedded system memory for buffering and caching, where fast access and reliable data storage are critical to overall system responsiveness and stability.
• Networking equipment such as routers and switches requiring quick data access and low latency for packet processing.
• Industrial control systems that demand robust performance and low power consumption for continuous operation.
• Consumer electronics with compact PCB layouts where high-density memory is needed without sacrificing speed or power efficiency.

CY7C1021CV33-10ZI Brand Info

This SRAM product is part of a well-established portfolio designed for high-speed, low-power memory applications. Manufactured with stringent quality control, it offers engineers a reliable solution for embedded memory challenges. The device aligns with industry standards for performance and packaging, ensuring consistent operation in demanding environments. This product is supported by comprehensive documentation and technical resources to aid integration and deployment in a variety of industrial and commercial applications.

FAQ

What is the operating voltage range for this SRAM?

The device operates at a nominal voltage of 3.3 V with a tolerance of ??0.3 V, accommodating supply fluctuations while maintaining stable performance. This voltage level supports low power consumption and compatibility with modern industrial systems.