CY7C1011CV33-10ZXCT 1M x 8 CMOS SRAM Memory – 44-Pin SOJ Package

CY7C1011CV33-10ZXCT Overview

The CY7C1011CV33-10ZXCT is a 1M x 9-bit static RAM device designed for high-performance memory applications requiring fast access times and low power consumption. Operating at a 3.3V power supply, this SRAM offers a fast 10 ns access time, making it suitable for cache memory and buffering in industrial and computing environments. The device features CMOS technology for reliable operation and low static power dissipation. Its asynchronous operation and TTL-compatible inputs/outputs ensure straightforward integration into a variety of systems. This memory solution is ideal for engineers and sourcing specialists seeking a balanced combination of speed, density, and power efficiency from a trusted IC Manufacturer.

CY7C1011CV33-10ZXCT Technical Specifications

CY7C1011CV33-10ZXCT Key Features

• High-Speed Access: 10 ns access time enables rapid data retrieval for time-critical applications, enhancing overall system performance.
• Low Power CMOS Technology: Reduces power consumption during both active and standby modes, extending device reliability and reducing thermal load.
• Asynchronous Operation: Simplifies interface design by eliminating the need for clock signals, allowing flexible timing control in embedded systems.
• TTL-Compatible Inputs and Outputs: Ensures compatibility with a wide range of logic families and legacy systems, facilitating seamless integration.
• 9-Bit Wide Data Bus: Supports error correction and parity checking implementations, improving data integrity in critical applications.
• Wide Operating Temperature Range: Suitable for commercial environments, ensuring stable performance across typical industrial conditions.
• Compact 44-Pin TSOP Package: Supports high-density board layouts and simplifies thermal management in space-constrained designs.

CY7C1011CV33-10ZXCT Advantages vs Typical Alternatives

This SRAM device offers a competitive edge with its combination of fast 10 ns access time and low voltage 3.3 V operation, which reduces power consumption compared to older 5 V SRAMs. Its CMOS technology enhances reliability and thermal efficiency, while asynchronous operation and TTL compatibility simplify integration. The 9-bit data width allows advanced memory functions such as parity, providing greater data accuracy than many standard 8-bit alternatives.

Typical Applications

• High-speed cache memory in microprocessor and DSP systems, where fast access and low latency are essential for system throughput.
• Buffer memory in networking equipment, enabling rapid data packet storage and retrieval to maintain data flow integrity.
• Embedded system memory, where low power consumption and small package size contribute to efficient design.
• Industrial control systems requiring reliable, stable high-density SRAM for real-time data processing and temporary storage.

CY7C1011CV33-10ZXCT Brand Info

This device is part of a well-established product line from a leading IC Manufacturer specializing in high-performance semiconductor memory solutions. The CY7C1011CV33-10ZXCT reflects the brand??s commitment to providing engineers with reliable, fast, and power-efficient static RAM components designed for demanding industrial and computing applications. The brand is recognized for quality manufacturing standards, comprehensive datasheets, and global availability, supporting engineers and sourcing specialists in delivering optimized, durable designs.

FAQ

What is the operating voltage range for this SRAM?

The SRAM operates at a nominal voltage of 3.3 V with a tolerance of ??0.3 V, making it compatible with modern low-voltage digital systems.