CY7C106B-25VC Overview
The CY7C106B-25VC is a high-performance 16K x 8-bit static RAM (SRAM) designed for fast and reliable data storage in embedded systems and industrial applications. Featuring a 25ns access time, it supports efficient memory access with low latency, ideal for applications requiring quick read/write cycles. This device operates with a single 5V power supply and incorporates a three-state output buffer, enabling easy system integration and bus sharing. With robust electrical characteristics and a versatile 28-pin DIP package, it offers dependable operation across a range of environments. For detailed technical data and sourcing, visit IC Manufacturer.
CY7C106B-25VC Technical Specifications
| Parameter | Specification |
|---|---|
| Memory Organization | 16K x 8 bits |
| Access Time | 25 ns |
| Operating Voltage (Vcc) | 5 V ?? 10% |
| Package Type | 28-pin DIP |
| Data Retention Voltage | 2 V (typical) |
| Operating Temperature Range | 0??C to +70??C |
| Power Consumption (Active) | 40 mA (typical) |
| Standby Power | 10 mA (typical) |
| Output Type | Three-state TTL compatible |
| Input Levels | TTL compatible |
CY7C106B-25VC Key Features
- Fast access time of 25 ns: Enables rapid data retrieval and storage, improving system throughput in time-critical applications.
- Single 5V power supply operation: Simplifies power design and reduces system complexity, making integration straightforward.
- Three-state output buffer: Allows direct connection to a shared bus, facilitating flexible memory expansion and system scalability.
- TTL compatible inputs and outputs: Ensures compatibility with standard digital logic families for seamless system interfacing.
- Low standby power consumption: Helps reduce overall power usage during idle periods, enhancing energy efficiency.
- Robust 28-pin DIP packaging: Provides mechanical reliability and ease of handling during manufacturing and prototyping.
CY7C106B-25VC Advantages vs Typical Alternatives
This SRAM device offers a competitive advantage with its fast 25 ns access time and low active power consumption compared to typical memory solutions. Its three-state output design enhances integration flexibility, allowing multiple devices on a common data bus without interference. The single 5V power supply operation aligns with standard digital logic levels, improving compatibility and simplifying system design. These factors collectively make it a reliable and efficient choice for embedded memory applications.
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Typical Applications
- Embedded systems requiring fast, non-volatile data storage and retrieval, such as microcontroller-based control units or industrial automation modules.
- High-speed cache memory for processors or digital signal processing (DSP) systems where low latency is critical.
- Buffer memory for data acquisition systems to temporarily store sensor outputs before processing.
- General-purpose static RAM use in communications equipment, test instruments, and other digital electronic devices requiring rapid access.
CY7C106B-25VC Brand Info
The CY7C106B-25VC is part of a well-established family of static RAM products renowned for their performance and reliability in industrial and embedded markets. Manufactured with stringent quality standards, this device delivers consistent operation and long-term stability. Its design emphasizes ease of use, making it a preferred choice for engineers seeking dependable memory solutions with straightforward integration and proven electrical characteristics.
FAQ
What is the primary function of the CY7C106B-25VC SRAM?
The device functions as a static RAM with a 16K x 8-bit organization, providing fast, volatile storage for digital data. It supports quick read/write cycles with an access time of 25 ns, ideal for applications requiring temporary data buffering or caching.
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Can the device operate with different voltage levels?
This SRAM is designed to operate with a single 5 V ?? 10% power supply. It does not support lower voltage operation modes, so system design must ensure stable 5 V




