CY62147DV18LL-55BVI Overview
The CY62147DV18LL-55BVI is a high-performance 1Mb (128K x 8) SRAM memory device optimized for low power consumption and fast access times. Featuring a 1.8V power supply operation and an access time of 55ns, this component suits demanding industrial and embedded applications requiring reliable, high-speed data storage. Housed in a compact SOIC-28 package, it supports easy integration into space-constrained designs. Engineers and sourcing specialists will appreciate its robust operating temperature range and low standby current, contributing to enhanced system efficiency and durability. For detailed product information and sourcing options, visit the IC Manufacturer.
CY62147DV18LL-55BVI Technical Specifications
| Parameter | Specification |
|---|---|
| Memory Density | 1Mb (128K x 8) |
| Access Time | 55 ns |
| Operating Voltage | 1.8 V ?? 0.15 V |
| Package Type | 28-pin SOIC |
| Operating Temperature Range | -40??C to +85??C |
| Standby Current | 3 ??A (typical) |
| Operating Current | 40 mA (typical) |
| Data Retention Voltage | 1.5 V (minimum) |
| Interface | Asynchronous SRAM |
CY62147DV18LL-55BVI Key Features
- Fast 55 ns access time: Enables rapid data retrieval, critical for high-speed processing and real-time applications.
- Low-voltage operation at 1.8 V: Reduces power consumption, extending battery life in portable and embedded systems.
- Low standby current of 3 ??A: Minimizes power draw during idle periods, improving energy efficiency in always-on devices.
- Wide operating temperature range (-40??C to +85??C): Ensures reliable performance in harsh industrial environments.
- Standard 28-pin SOIC packaging: Facilitates compact PCB layouts and simplifies assembly processes.
- Asynchronous SRAM interface: Supports straightforward integration with microcontrollers and processors without complex timing requirements.
CY62147DV18LL-55BVI Advantages vs Typical Alternatives
This SRAM device offers a compelling combination of low operating voltage and fast access time compared to conventional 3.3 V or 5 V memory alternatives. Its reduced power consumption and minimal standby current enhance system efficiency and thermal management. Additionally, the wide temperature range and compact SOIC packaging provide superior reliability and ease of integration for industrial and embedded system designs.
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Typical Applications
- Embedded systems requiring fast, low-power memory storage for buffering and caching data in automotive, industrial automation, or handheld devices.
- Battery-powered electronics where energy efficiency and data retention are critical to prolong device operation.
- Telecommunications equipment needing reliable and quick SRAM access to support buffering and temporary data storage.
- Consumer electronics that demand compact, high-speed memory components for enhanced performance in constrained form factors.
CY62147DV18LL-55BVI Brand Info
This product is part of a memory portfolio designed by a leading semiconductor manufacturer specializing in reliable, high-quality integrated circuits for industrial and embedded applications. The CY62147DV18LL-55BVI SRAM reflects the company??s commitment to delivering low-power, high-speed memory solutions that meet rigorous performance and environmental standards. Its proven production processes and comprehensive quality control ensure consistent device performance across diverse application environments.
FAQ
What is the operating voltage range for this SRAM device?
The device operates at a nominal voltage of 1.8 V with a tolerance of ??0.15 V, making it suitable for low-voltage applications that prioritize power efficiency without sacrificing speed.
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How does the standby current impact overall power consumption?
With a typical standby current