CY62148DV30LL-55BVXI 64K x 16bit SRAM Memory IC, 48-Pin SOJ Package

  • The CY62148DV30LL-55BVXI serves as a high-speed SRAM, enabling rapid data access for system performance enhancement.
  • Operates at 55 ns access time, ensuring swift memory retrieval crucial for time-sensitive applications.
  • Encased in a compact TSOP package, it offers board-space savings suitable for dense circuit layouts.
  • Ideal for use in embedded systems requiring fast, volatile storage to support real-time processing tasks.
  • Designed for consistent operation with robust quality controls to maintain data integrity over extended use.
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CY62148DV30LL-55BVXI Overview

The CY62148DV30LL-55BVXI is a high-performance static RAM (SRAM) designed for industrial and embedded system applications requiring fast access times and low power consumption. Featuring a 1 Megabit (128K x 8-bit) memory organization, this device operates on a single 3.0V power supply and supports a maximum access time of 55ns, making it suitable for systems demanding rapid data retrieval and storage. Its 48-pin TSOP II package ensures efficient board space utilization. This SRAM is optimized to deliver reliable data retention and high-speed operation, aligning with the rigorous requirements of modern electronic designs. For more detailed product info, refer to IC Manufacturer.

CY62148DV30LL-55BVXI Technical Specifications

ParameterSpecification
Memory Size1 Mbit (128K x 8-bit)
Access Time55 ns
Power Supply Voltage2.7V to 3.6V (Nominal 3.0V)
Standby Current10 ??A (typical)
Operating Temperature Range-40??C to +85??C
Package Type48-pin TSOP II
Data Retention Voltage2.0V (minimum)
Input/Output Pins3-State
Write Cycle Time70 ns (maximum)
Operating Current20 mA (maximum)

CY62148DV30LL-55BVXI Key Features

  • Fast 55 ns access time: Enables rapid data access, critical for high-speed data processing in embedded systems.
  • Low power consumption: Standby current as low as 10 ??A supports energy-efficient designs and extends battery life in portable applications.
  • Wide operating voltage range (2.7V to 3.6V): Ensures compatibility with various 3V power systems, enhancing design flexibility.
  • Robust industrial temperature range (-40??C to +85??C): Guarantees reliable operation in harsh environments and industrial applications.
  • 48-pin TSOP II package: Provides a compact footprint, allowing high-density PCB layouts and optimized board space.
  • 3-state outputs: Facilitate easy bus sharing and system integration without additional buffering.
  • Data retention at low voltage: Maintains stored data integrity down to 2.0V, useful for power-fail scenarios.

CY62148DV30LL-55BVXI Advantages vs Typical Alternatives

This SRAM offers faster access times and lower power consumption than many typical alternatives, making it ideal for time-sensitive, low-power industrial applications. Its wide voltage and temperature operating ranges improve reliability and integration flexibility, while the space-saving TSOP II package supports compact designs. Combined, these advantages result in higher system efficiency and robustness compared to standard SRAM devices.

Typical Applications

  • Embedded systems requiring fast and reliable volatile memory for buffering and caching data during processing.
  • Industrial automation controls where operation over a wide temperature range and low power are essential.
  • Networking equipment that demands high-speed data access and low standby power to maintain performance and energy efficiency.
  • Battery-powered portable devices benefiting from low operating current and data retention at reduced voltages.

CY62148DV30LL-55BVXI Brand Info

The CY62148DV30LL-55BVXI is part of a specialized SRAM product line offered by a leading semiconductor manufacturer known for high-quality memory solutions. Designed for demanding industrial and embedded applications, this device reflects the brand’s commitment to delivering reliable, high-speed, and low-power memory components optimized for modern electronic systems. The product supports a broad range of applications with robust performance backed by rigorous quality standards.

FAQ

What is the memory organization and size of this SRAM device?

The device features a 1 Megabit memory organized as 128K words by 8 bits. This configuration provides ample storage for data buffering and fast access in embedded systems requiring

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