CY62128DV30LL-55SI Overview
The CY62128DV30LL-55SI is a high-performance 128K x 8-bit static RAM (SRAM) device designed for fast, reliable data storage in industrial and embedded applications. Operating at a 3.0 V power supply, it supports an access time of 55 ns, enabling rapid data retrieval and storage. This low-voltage SRAM combines high-speed operation with low power consumption, making it ideal for systems requiring efficient memory management. Its 32-pin TSOP II package facilitates compact board design and easy integration. For detailed and authoritative information, visit IC Manufacturer.
CY62128DV30LL-55SI Technical Specifications
| Parameter | Specification |
|---|---|
| Memory Density | 128K x 8 bits (1,048,576 bits) |
| Access Time | 55 ns |
| Operating Voltage | 3.0 V ?? 0.3 V |
| Input and Output Type | TTL Compatible |
| Standby Current | 5 ??A (typical) |
| Operating Temperature Range | 0??C to +70??C |
| Package Type | 32-pin TSOP II |
| Data Retention Voltage | 2.0 V (min) |
CY62128DV30LL-55SI Key Features
- Fast 55 ns access time: Enables quick data read/write operations, improving system throughput in time-critical applications.
- Low-voltage 3.0 V operation: Reduces power consumption and heat generation, enhancing energy efficiency in embedded systems.
- TTL compatible inputs and outputs: Ensures seamless interfacing with standard logic circuits, simplifying integration into existing designs.
- Low standby current: Minimizes power draw during idle periods, supporting battery-powered and low-power systems.
- Compact 32-pin TSOP II package: Saves PCB space while maintaining ease of handling and mounting for dense electronic assemblies.
- Wide operating temperature range: Guarantees reliable performance in industrial environments subject to variable thermal conditions.
- Data retention at reduced voltage: Maintains stored data integrity during power fluctuations or standby modes.
CY62128DV30LL-55SI Advantages vs Typical Alternatives
This SRAM device stands out by combining a fast 55 ns access time with low-voltage operation at 3.0 V, offering improved power efficiency compared to higher voltage counterparts. Its low standby current and TTL compatibility enhance system reliability and ease of integration. The compact TSOP II package further allows for space-saving PCB layouts, positioning this device as a superior choice for embedded memory applications where speed, power, and form factor are critical.
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Typical Applications
- Embedded memory for microprocessor-based systems requiring high-speed data storage with low power consumption, such as industrial controllers and communication devices.
- Buffer memory in networking equipment, ensuring rapid data access and transfer for efficient packet processing.
- Cache memory in digital signal processing (DSP) applications, accelerating computational throughput.
- General-purpose SRAM in consumer electronics and portable devices where compact size and low power are essential.
CY62128DV30LL-55SI Brand Info
The CY62128DV30LL-55SI is a product from a trusted semiconductor manufacturer specializing in memory solutions for industrial and embedded markets. This SRAM device reflects the brand??s commitment to delivering reliable, high-performance components that meet rigorous industry standards. Designed with precision and quality assurance, it supports a wide range of applications requiring fast, low-power memory with robust operational stability.
FAQ
What is the operating voltage range of this static RAM?
The device operates at a nominal voltage of 3.0 V with a tolerance of ??0.3 V. This low-voltage operation helps reduce power consumption while maintaining reliable performance in embedded systems.
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