CY62146DV30L-70BVI Overview
The CY62146DV30L-70BVI is a high-performance, low-power 16M-bit (2M x 8) CMOS static RAM device designed for fast access applications. Operating at a 70 ns access time with a 3.0 V power supply, it offers reliable data retention and efficient operation, making it ideal for embedded systems and buffer memory uses. Its CMOS technology ensures low standby current and excellent data stability. With a standard 48-pin TSOP II package, this component facilitates easy integration into a variety of industrial and consumer electronics systems requiring compact, high-speed SRAM solutions. For more detailed technical support and product updates, visit IC Manufacturer.
CY62146DV30L-70BVI Technical Specifications
| Parameter | Specification |
|---|---|
| Memory Density | 16 Mbit (2M x 8) |
| Access Time | 70 ns |
| Operating Voltage | 3.0 V ?? 0.3 V |
| Data Retention Voltage | 2.0 V (typical) |
| Standby Current | 10 ??A (max) |
| Operating Temperature Range | -40??C to +85??C |
| Package Type | 48-pin TSOP II |
| Input/Output Type | TTL compatible |
| Power Consumption (Operating) | 30 mA (typical) |
CY62146DV30L-70BVI Key Features
- Fast 70 ns access time: Enables high-speed data retrieval essential for real-time processing and system buffering.
- Low power CMOS technology: Minimizes power consumption during active and standby modes, extending battery life in portable devices.
- Wide operating temperature range: Ensures reliable performance in industrial and automotive environments subject to temperature extremes.
- Data retention at low voltage: Maintains data integrity down to 2.0 V, advantageous for power-sensitive designs and data preservation.
- Standard 48-pin TSOP II package: Facilitates compact PCB layout and compatibility with existing design footprints.
- TTL compatible I/O signals: Guarantees seamless interface with standard logic families without additional level translation.
CY62146DV30L-70BVI Advantages vs Typical Alternatives
This SRAM device offers a strong combination of fast access speed and low power consumption compared to typical asynchronous SRAMs. Its wide operating voltage and temperature range provide enhanced reliability in harsh industrial settings. The integration of CMOS technology reduces standby current significantly, making it an efficient choice for battery-operated systems. Additionally, its compact TSOP II package supports high-density board designs without compromising performance, distinguishing it from bulkier or slower alternatives.
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Typical Applications
- High-speed cache memory in embedded processors requiring fast and reliable data access for improved system throughput and responsiveness.
- Buffer memory for communication devices where low latency and power efficiency are critical for signal processing.
- Data storage in industrial control systems operating across wide temperature ranges and demanding robust retention capabilities.
- Portable and handheld electronics that benefit from low standby power consumption to extend battery life without sacrificing speed.
CY62146DV30L-70BVI Brand Info
This SRAM product is part of a well-established semiconductor portfolio known for delivering reliable and high-performance memory solutions. Engineered with advanced CMOS technology, it reflects the brand??s commitment to innovation and quality in semiconductor memory devices. The device is backed by comprehensive technical documentation and support, ensuring ease of integration and long-term reliability in demanding industrial and commercial applications.
FAQ
What is the operating voltage range for this SRAM device?
The device operates at a nominal voltage of 3.0 V with a tolerance of ??0.3 V, providing stable functionality across a range from approximately 2.7 V to 3.3 V. It also supports data retention down to 2.0
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