CY7C106BN-15VC 1M x 8 SRAM Memory IC – 44-Pin PLCC Package

CY7C106BN-15VC Overview

The CY7C106BN-15VC is a high-performance 1M x 8-bit static RAM designed for fast and reliable data storage and retrieval in industrial and embedded systems. Featuring a 15 ns access time, this SRAM balances speed and power efficiency, making it ideal for applications requiring quick memory access with minimal latency. Packaged in a compact 32-pin plastic DIP form factor, it supports a 5 V power supply and operates with low power consumption. This device is suitable for memory buffering, cache memory, and other data-intensive tasks where consistent performance is critical. For detailed specifications, visit IC Manufacturer.

CY7C106BN-15VC Technical Specifications

CY7C106BN-15VC Key Features

• High-Speed Access: With a 15 ns access time, it enables rapid data retrieval, improving system performance in time-critical applications.
• Large Memory Capacity: Offers 1M x 8-bit storage, providing ample space for cache, buffer, or working memory without sacrificing footprint.
• Stable Power Supply Operation: Operates reliably at 5 V with low power consumption, ensuring efficiency in industrial environments.
• Industry-Standard Packaging: The 32-pin DIP package facilitates easy integration into existing PCB designs and prototyping workflows.

CY7C106BN-15VC Advantages vs Typical Alternatives

This SRAM device delivers superior speed and stability compared to typical asynchronous memory alternatives. Its 15 ns access time reduces latency, while the 5 V operation aligns with standard industrial voltages, enhancing compatibility. Additionally, the low standby current supports power-sensitive applications. These advantages make it a reliable choice for engineers seeking fast, efficient, and readily integrable memory solutions.

Typical Applications

• Embedded systems requiring high-speed scratchpad memory for temporary data storage and rapid processing cycles, such as industrial controllers and instrumentation.
• Cache memory in microprocessor-based systems to accelerate data access and improve overall system throughput.
• Buffer memory in communication devices to manage data flow efficiently and prevent bottlenecks.
• Data storage in test and measurement equipment where quick read/write cycles are essential for accurate performance.

CY7C106BN-15VC Brand Info

The CY7C106BN-15VC is part of a trusted family of SRAM products designed for high reliability and performance in demanding applications. Manufactured with stringent quality controls, this memory device represents a proven solution for engineers requiring robust, fast, and efficient static RAM. Its design supports seamless integration into a wide range of electronic systems, reinforcing the brand??s commitment to delivering dependable semiconductor components for industrial and embedded markets.

FAQ

What is the primary function of the CY7C106BN-15VC SRAM?

This SRAM module provides fast, static random access memory storage with a 1M x 8-bit configuration. It allows quick read and write operations without the need for refresh cycles, making it suitable for cache and buffer memory in embedded and industrial systems.

What are the power requirements and consumption characteristics of this device?

The device operates at a nominal 5 V power supply and typically consumes low standby current around 10 mA. This ensures energy-efficient operation while maintaining reliable performance under standard industrial voltage conditions.

How does the 15 ns access time impact system performance?

The 15 ns access time provides