CY7C106B-20VC SRAM Memory IC 1M x 8 20ns 28-Pin DIP Package

CY7C106B-20VC Overview

The CY7C106B-20VC is a high-performance 16K x 8-bit Static Random Access Memory (SRAM) device designed for fast access and reliable data storage in embedded systems. Operating at a 20 ns access time, it offers low-power consumption combined with high-speed operation, making it ideal for applications requiring quick, stable memory performance. Packaged in a 28-pin plastic DIP, this SRAM supports a broad voltage range and is compatible with standard system designs, providing engineers and sourcing specialists with a dependable solution for memory integration. For detailed technical support and procurement, visit IC Manufacturer.

CY7C106B-20VC Technical Specifications

CY7C106B-20VC Key Features

• Fast 20 ns Access Time: Enables rapid data retrieval and storage, minimizing latency in high-speed digital systems.
• Low Power Consumption: Optimized operating and standby currents reduce system power requirements, enhancing energy efficiency.
• TTL Compatible Inputs and Outputs: Ensures straightforward integration with common logic families and processors in embedded designs.
• Standard 28-pin DIP Package: Facilitates easy replacement and prototyping on existing hardware platforms without redesign.

CY7C106B-20VC Advantages vs Typical Alternatives

This SRAM device offers significant advantages over typical memory alternatives by combining a fast 20 ns access time with low power consumption, which is critical for power-sensitive and speed-dependent applications. Its TTL compatibility and standard DIP packaging support seamless integration and reduce design complexity. The broad operating voltage range and stable data retention voltage enhance reliability under various system conditions, making it a preferred choice for industrial and embedded memory solutions.

Typical Applications

• Embedded Systems: Provides fast, reliable memory storage for microcontroller-based applications requiring quick access to system data or instructions.
• Buffer Memory: Acts as temporary storage in communication devices and digital signal processors to handle data flow efficiently.
• Cache Memory: Serves as high-speed cache in computing systems to improve overall processing performance.
• Industrial Control Systems: Supports memory requirements for programmable logic controllers (PLCs) and automation equipment.

CY7C106B-20VC Brand Info

The CY7C106B-20VC is manufactured by Cypress Semiconductor, recognized for delivering high-quality memory and semiconductor solutions. This product is part of Cypress??s extensive lineup of SRAM devices tailored for embedded and industrial applications requiring fast access, low power, and robust performance. Cypress??s commitment to reliability and innovation ensures this SRAM meets stringent industry standards for demanding electronic systems.

FAQ

What is the typical operating voltage range for this SRAM?

The device operates within a voltage range of 4.5 V to 5.5 V, accommodating standard 5 V logic systems while ensuring stable performance and data retention down to 2.0 V.

Can this memory be interfaced directly with TTL logic devices?

Yes, the SRAM features TTL-compatible input and output levels, allowing direct interfacing with common TTL logic without additional level shifting or buffering, simplifying system design.

What is the maximum operating temperature for reliable performance?

The device is rated for an operating temperature range from 0??C to +70??C, making it suitable for most commercial and industrial environments where temperature stability is required.

How does the access time impact system performance?

A 20 ns access time means the