The CY7C1019CV33-15VXCT is a high-speed 1M-bit (128K x 8) static RAM designed for fast, reliable data storage in industrial and computing applications. Operating at 3.3V supply voltage with a 15ns access time, it offers low power consumption and robust performance suitable for embedded systems, cache memory, and buffer implementations. Featuring an asynchronous interface with TTL-compatible inputs and outputs, this SRAM supports easy integration into a variety of digital environments. Manufactured with advanced CMOS technology, this device balances speed, power efficiency, and data integrity, making it ideal for engineers and sourcing specialists seeking dependable memory solutions. IC Manufacturer
CY7C1019CV33-15VXCT Technical Specifications
Parameter
Specification
Memory Size
1M-bit (128K x 8)
Access Time
15 ns
Supply Voltage (Vcc)
3.3 V ?? 0.3 V
Input/Output Type
TTL compatible
Operating Temperature
0??C to 70??C
Package Type
44-pin TSOP II
Power Supply Current (Active)
90 mA (Max)
Standby Current
75 ??A (Max)
Data Retention Voltage
2.0 V (Min)
Operating Mode
Asynchronous SRAM
CY7C1019CV33-15VXCT Key Features
High-Speed 15 ns Access Time: Enables rapid data retrieval and storage, critical for performance-sensitive applications such as cache memory and data buffering.
Low Power Consumption: Operates efficiently at 3.3 V with minimal active and standby current, extending device lifespan and reducing thermal load.
TTL-Compatible Inputs and Outputs: Facilitates straightforward integration into existing TTL-based digital systems, simplifying design and testing processes.
44-Pin TSOP II Package: Offers a compact footprint for space-constrained applications while ensuring reliable mechanical and electrical connections.
Wide Operating Temperature Range: Guaranteed operation from 0??C to 70??C suits commercial and industrial environments.
Data Retention at Reduced Voltage: Maintains data integrity down to 2.0 V, supporting low-voltage standby modes.
Asynchronous SRAM Architecture: Provides flexible timing control without requiring clock signals, easing timing constraints in system design.
CY7C1019CV33-15VXCT Advantages vs Typical Alternatives
This SRAM device offers a balanced combination of speed, power efficiency, and ease of integration compared to typical alternatives. Its 15 ns access time enhances system responsiveness, while the low active and standby currents minimize power consumption. The 3.3 V operation aligns with modern low-voltage standards, reducing power supply complexity. Additionally, the asynchronous interface and TTL compatibility simplify design and reduce development time, making it a reliable and cost-effective choice for industrial memory applications.
High-speed cache memory in embedded processors, providing fast access to frequently used data and improving overall system performance.
Data buffer storage in communication devices, ensuring smooth data flow between components operating at different speeds.
Temporary data storage in industrial control systems, where reliability and quick access to data are critical for process monitoring and control.
Memory expansion for networking equipment, enabling efficient packet processing and data handling in routers and switches.
CY7C1019CV33-15VXCT Brand Info
The CY7C1019CV33-15VXCT is part of a comprehensive product portfolio designed by a leading semiconductor manufacturer specializing in high-performance memory solutions. This device reflects the brand??s commitment to delivering reliable, fast, and power-efficient SRAM products tailored for industrial and computing markets. With rigorous quality control and adherence to industry standards, the brand ensures that each memory component meets stringent electrical and environmental specifications, supporting long-term system stability and customer satisfaction.
FAQ
What is the operating voltage range for this SRAM device?
