The FM25040B-GA is a high-performance 256Kbit (32K ?? 8) ferroelectric RAM (FRAM) device designed for fast, non-volatile memory applications. Featuring low power consumption and unlimited read/write endurance, it offers a reliable alternative to traditional EEPROM and Flash memory for industrial and embedded systems. The device integrates a SPI-compatible interface supporting multiple modes for flexible, high-speed communication. Its robust architecture ensures data integrity and rapid access times, making it ideal for applications requiring frequent data updates and long-term retention. For more detailed information, visit the IC Manufacturer.
FM25040B-GA Technical Specifications
Parameter
Specification
Memory Density
256 Kbit (32K ?? 8 bits)
Memory Type
Ferroelectric RAM (FRAM)
Interface
SPI-compatible (Modes 0,0; 0,1; 1,0; 1,1)
Supply Voltage
2.7 V to 3.6 V
Access Time (Read)
70 ns (max)
Write Cycle Endurance
Unlimited (no wear-out)
Data Retention
More than 10 years at 85??C
Operating Temperature Range
-40??C to +85??C
Package
8-lead SOP
FM25040B-GA Key Features
Fast SPI Interface: Supports multiple SPI modes allowing flexible, high-speed serial communication for efficient data transfer.
Non-Volatile FRAM Technology: Combines the speed of RAM with non-volatility, enabling instant data retention without power supply.
Unlimited Write Endurance: Capable of unlimited read/write cycles, significantly extending the device lifespan compared to EEPROM or Flash.
Low Power Consumption: Operates at low voltage (2.7 V to 3.6 V), ideal for energy-sensitive and battery-powered systems.
Robust Data Retention: Maintains stored data for over 10 years at elevated temperatures, ensuring long-term reliability in industrial environments.
Compact 8-Lead SOP Package: Facilitates easy integration into space-constrained PCB layouts without sacrificing performance.
Wide Operating Temperature Range: Suitable for harsh industrial applications, operating reliably from -40??C to +85??C.
FM25040B-GA Advantages vs Typical Alternatives
Compared to conventional EEPROM and Flash memories, this FRAM device offers unlimited write endurance and faster access times, which enhances performance and reduces maintenance costs in high-write applications. Its low voltage operation and long data retention provide superior reliability and energy efficiency. Additionally, the SPI interface supports flexible integration with standard microcontrollers, making it a preferred choice for industrial-grade embedded designs.
Data logging in industrial controllers where frequent memory updates are required without compromising endurance or reliability.
Non-volatile memory storage in handheld and portable devices demanding low power consumption and rapid data access.
Smart metering systems requiring fast, reliable writes and long-term data retention under harsh environmental conditions.
Embedded system firmware storage applications benefiting from instant data retention and high-speed SPI communication.
FM25040B-GA Brand Info
This ferroelectric RAM device is produced by a leading semiconductor manufacturer specializing in advanced memory solutions for industrial and embedded markets. The product is part of a wider family of FRAM components designed to deliver high-speed, low-power non-volatile memory with exceptional endurance. Known for rigorous quality standards and robust packaging, the brand ensures reliable performance for mission-critical applications worldwide.
FAQ
What makes the FM25040B-GA different from traditional EEPROM
