CY7C1021DV33-10ZSXI Overview
The CY7C1021DV33-10ZSXI is a high-performance 1M x 8-bit static RAM (SRAM) device optimized for fast and reliable data storage in demanding industrial and embedded applications. Operating at a 3.3V power supply, it delivers a swift 10 ns access time, ensuring minimal latency for critical system functions. This SRAM features low power consumption and a stable CMOS architecture, making it an excellent choice for systems requiring efficient memory integration with robust data retention. Designed to meet stringent industrial standards, the device supports seamless interfacing with microprocessors and digital systems, enhancing overall application performance. For additional product details, visit IC Manufacturer.
CY7C1021DV33-10ZSXI Technical Specifications
| Parameter | Specification |
|---|---|
| Memory Capacity | 1,048,576 words ?? 8 bits (1M x 8) |
| Access Time | 10 ns (nanoseconds) |
| Operating Voltage | 3.3 V ?? 0.3 V |
| Input/Output Type | TTL compatible |
| Operating Temperature Range | -40??C to +85??C (Industrial Grade) |
| Package Type | 44-pin TSOP II (Thin Small Outline Package) |
| Standby Power Consumption | Typically 50 ??A |
| Data Retention Voltage | 2.0 V minimum |
CY7C1021DV33-10ZSXI Key Features
- High-Speed Access: 10 ns access time enables rapid data retrieval, critical for real-time processing systems.
- Low Voltage Operation: Supports 3.3 V power supply, reducing overall system power consumption and heat generation.
- Industrial Temperature Range: Reliable performance from -40??C to +85??C ensures suitability for harsh environments.
- Compact TSOP II Package: 44-pin thin small outline package allows space-saving PCB layouts without compromising pin accessibility.
- Low Standby Current: Minimizes power dissipation during idle modes, enhancing energy efficiency in battery-powered or low-power devices.
- TTL Compatible I/O: Simplifies interface with a wide range of digital logic families and microcontrollers.
- Stable Data Retention: Maintains stored data reliably even during low power conditions with a minimum retention voltage of 2.0 V.
CY7C1021DV33-10ZSXI Advantages vs Typical Alternatives
This SRAM device offers a competitive edge by combining fast 10 ns access time with low 3.3 V power operation, which reduces power consumption compared to legacy 5 V SRAMs. Its industrial temperature rating and low standby current increase reliability and efficiency in challenging environments. The compact TSOP II package facilitates easier integration in space-constrained designs, providing a practical advantage over bulkier alternatives.
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Typical Applications
- Embedded Systems: Ideal for fast and reliable memory storage in microcontroller-based embedded applications requiring quick access and low power use.
- Networking Equipment: Suitable for buffering and caching in routers and switches, where speed and data integrity are critical.
- Industrial Control Systems: Provides robust memory performance under wide temperature ranges, supporting automation and control tasks.
- Data Acquisition Systems: Enables efficient temporary data storage with fast read/write cycles in measurement and monitoring devices.
CY7C1021DV33-10ZSXI Brand Info
The CY7C1021DV33-10ZSXI is part of a respected line of SRAM products designed to meet stringent industry requirements. Manufactured with precision CMOS technology, it reflects the brand??s commitment to delivering durable, high-speed memory solutions optimized for industrial and embedded applications. This device exemplifies the brand??s focus on advanced performance, low power consumption, and reliable operation across diverse operating conditions.
FAQ
What is the primary memory organization of this SRAM?
The device is organized as 1,048,
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