CY7C1021CV33-15BAI Overview
The CY7C1021CV33-15BAI is a high-performance static RAM (SRAM) device tailored for industrial and embedded applications requiring low power and fast access memory solutions. Featuring a 32K x 8-bit memory array, it operates at a 33 MHz frequency with a 15 ns access time, ensuring rapid data retrieval in real-time systems. Designed with a 5V power supply and organized in a 28-pin SOJ package, this SRAM supports asynchronous read and write cycles, making it ideal for buffer memory, cache memory, and other high-speed data storage needs. For comprehensive details, visit IC Manufacturer.
CY7C1021CV33-15BAI Technical Specifications
| Parameter | Specification |
|---|---|
| Memory Size | 32K x 8 bits (262,144 bits) |
| Access Time | 15 ns |
| Operating Frequency | 33 MHz |
| Power Supply Voltage (Vcc) | 5 V ??10% |
| Package Type | 28-pin Small Outline J-Lead (SOJ) |
| Input/Output Configuration | Asynchronous Read/Write |
| Operating Temperature Range | 0??C to +70??C (Commercial) |
| Standby Current | Typically 10 mA |
CY7C1021CV33-15BAI Key Features
- High-Speed Access: The 15 ns access time enables rapid data retrieval, critical for systems requiring fast response times such as cache memories and buffer storage.
- Asynchronous Operation: Supports asynchronous read and write cycles, allowing flexible timing control without the need for clock synchronization, which simplifies integration into various system architectures.
- Low Power Consumption: With a typical standby current of 10 mA, it optimizes power efficiency in embedded and portable applications, reducing thermal stress and extending device longevity.
- Robust Packaging: The 28-pin SOJ package offers reliable mounting and soldering options, contributing to mechanical stability and ease of PCB design.
CY7C1021CV33-15BAI Advantages vs Typical Alternatives
This SRAM device delivers faster access times and lower standby power compared to traditional asynchronous SRAMs at similar densities. Its 5V operation ensures compatibility with legacy systems, while the small outline J-lead package facilitates compact board layouts. These factors combined provide a reliable, efficient memory solution with ease of integration and enhanced performance over typical memory alternatives.
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Typical Applications
- Cache Memory Systems: Ideal for temporary data storage in microprocessor cache implementations, enabling quick data access and improved processing speeds in embedded computing devices.
- Buffer Storage: Used as buffering in data communications systems and peripherals to handle temporary data flow without data loss.
- Industrial Control Systems: Suitable for storing configuration data or temporary logs in automation and control environments due to its high reliability and fast read/write cycles.
- Embedded Systems: Functions effectively as general-purpose memory in embedded applications requiring non-volatile, fast SRAM with low power consumption.
CY7C1021CV33-15BAI Brand Info
The CY7C1021CV33-15BAI is part of the industry-renowned family of SRAM products known for their speed, reliability, and robustness. Manufactured under stringent quality standards, this memory device addresses the needs of engineers seeking dependable high-speed SRAM solutions. Its legacy in embedded and industrial markets is underscored by consistent performance across demanding environments and compatibility with a wide range of system designs.
FAQ
What is the memory organization and size of this SRAM?
The device features a 32K x 8-bit memory organization, equating to a total of 262,144 bits of static RAM. This size is well-suited for mid-range memory requirements in embedded and industrial applications.
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What is the operating voltage range for this device?
This SRAM operates at a standard




