CY62127BVLL-70BKI 128K x8 SRAM Memory IC – 28-Pin SOJ Package

  • This device provides high-speed synchronous static RAM, enabling efficient data storage and fast access for computing tasks.
  • Operating at a 70 ns access time, it supports quick read/write cycles essential for performance-critical applications.
  • The compact LCC package minimizes board space, facilitating integration into dense circuit designs.
  • Ideal for buffering data in embedded systems, it enhances system responsiveness and operational throughput.
  • Manufactured under controlled conditions, it ensures consistent performance and reliability over extended use.
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CY62127BVLL-70BKI Overview

The CY62127BVLL-70BKI is a high-performance 128K x 8-bit static RAM designed for fast, reliable data storage and retrieval in industrial and embedded systems. Operating at a 70 ns access time, it ensures swift data access critical for time-sensitive applications. This low-voltage CMOS device offers a wide power supply range from 2.7 V to 3.6 V, optimizing energy efficiency without compromising performance. Packaged in a compact 32-pin TSOP II form factor, it supports easy integration into space-constrained designs. Engineered for durability and stability, this SRAM is ideal for engineers and sourcing specialists seeking robust memory solutions. For more information, visit the IC Manufacturer.

CY62127BVLL-70BKI Technical Specifications

ParameterSpecification
Memory Organization128K x 8 bits
Access Time70 ns
Operating Voltage2.7 V to 3.6 V
Power Supply Current (Operating)30 mA (typical)
Standby Current10 ??A (max)
Package Type32-pin TSOP II
Data Retention Voltage2.0 V (min)
Operating Temperature Range-40??C to +85??C
Input/Output TypeTTL Compatible

CY62127BVLL-70BKI Key Features

  • Fast 70 ns access time: Enables rapid data read/write cycles, enhancing system throughput and performance in real-time applications.
  • Wide voltage operation (2.7 V to 3.6 V): Provides flexibility for low power system designs without sacrificing speed or reliability.
  • Low standby current: Minimizes power consumption during idle periods, extending battery life in portable or energy-conscious applications.
  • Compact 32-pin TSOP II packaging: Facilitates easy PCB layout and high-density system integration in space-constrained environments.
  • Industrial temperature range (-40??C to +85??C): Ensures stable operation under harsh environmental conditions, suitable for automotive and industrial control systems.

CY62127BVLL-70BKI Advantages vs Typical Alternatives

This device offers superior speed at 70 ns access time combined with low power consumption, outperforming many traditional SRAM alternatives. Its broad voltage range and industrial temperature tolerance provide enhanced reliability and operational flexibility. The compact TSOP II form factor simplifies integration in dense boards, making it a preferred choice for engineers requiring efficient, robust memory solutions in demanding environments.

Typical Applications

  • Embedded systems requiring fast, reliable memory storage with minimal power consumption, such as industrial controllers and communication devices.
  • Buffer memory for networking equipment, enabling quick data handling and low latency operations.
  • High-speed cache memory in consumer electronics and complex digital systems.
  • Data storage in automotive electronics, benefiting from industrial temperature range and robust design.

CY62127BVLL-70BKI Brand Info

The CY62127BVLL-70BKI is part of a well-established product lineup from a leading semiconductor manufacturer known for delivering reliable and high-performance memory ICs. This product exemplifies the brand??s commitment to quality, combining advanced CMOS technology with strict quality controls to meet industrial and commercial demands. The device is widely supported with comprehensive datasheets and application notes, ensuring engineers can implement it with confidence in diverse system designs.

FAQ

What is the access time of CY62127BVLL-70BKI and why is it important?

The SRAM offers an access time of 70 ns, which determines how quickly data can be read from or written to the memory. Faster access times improve overall system responsiveness, which is critical for applications requiring real-time data processing and high-speed operation.

What voltage ranges does this SRAM support

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